Nanoelectronics and Metrology
ORAL · Invited
Abstract
New and improved measurements are often needed to drive the discovery of scientific phenomena and enable commercial technical advancements. Nanoelectronics is a field where the need for advanced metrology has been critical. This need may be so obvious that, based on the abstract title, an online artificial intelligence gives the following description (with minor edits). Metrology, the science of measurement, plays a pivotal role in the development and manufacturing of nanoelectronic devices, which are at the forefront of modern electronics and information technology. As devices shrink to the nm-scale, traditional metrology methods face significant challenges in accurately characterizing these small features and their behavior. Nanoelectronic devices, including traditional Si-based transistors, memory elements, and components based on organics materials, are characterized by dimensions typically smaller than the wavelength of light, necessitating the development of novel measurement techniques.
While the need for cutting edge measurements is clear, fulfilling that need is challenging. When new materials are integrated into semiconductor electronics precise process monitoring techniques are needed such as sub-0.1 nm resolution thickness measurements for ultrathin high-k gate dielectrics. When new device paradigms, such as molecular electronics, are under development, measurements are needed to confirm reported behavior and clarify proposed mechanisms.
While innovative measurements drive new technologies and discoveries, the opposite is also true. Discoveries can enable new metrology. For instance, the quantum anomalous hall effect (QAHE) is a recently discovered quantum transport behavior associated with topological materials. In a QAHE device, the Hall resistance is quantized to the von Klitzing constant, RK (25,812.80745...Ω) at 0 T applied magnetic field. Such devices could be combined with Josephson voltage standards in a single cryostat to create a system that would realize the three fundamental units of electricity: volt, amp, and ohm.
While the need for cutting edge measurements is clear, fulfilling that need is challenging. When new materials are integrated into semiconductor electronics precise process monitoring techniques are needed such as sub-0.1 nm resolution thickness measurements for ultrathin high-k gate dielectrics. When new device paradigms, such as molecular electronics, are under development, measurements are needed to confirm reported behavior and clarify proposed mechanisms.
While innovative measurements drive new technologies and discoveries, the opposite is also true. Discoveries can enable new metrology. For instance, the quantum anomalous hall effect (QAHE) is a recently discovered quantum transport behavior associated with topological materials. In a QAHE device, the Hall resistance is quantized to the von Klitzing constant, RK (25,812.80745...Ω) at 0 T applied magnetic field. Such devices could be combined with Josephson voltage standards in a single cryostat to create a system that would realize the three fundamental units of electricity: volt, amp, and ohm.
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Presenters
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Curt A Richter
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, National Institute of Standards and Technology
Authors
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Curt A Richter
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, National Institute of Standards and Technology