Structural, electronic and magnetic properties of the Van der Waals ScSi2N<sub>4</sub>/VSi2N<sub>4</sub> heterostructure: a first-principles study
ORAL
Abstract
van der Waals (vdW) interactions enhance countless spin-dependent electronic devices, raising the focus to discover new magnetic interactions. This work aims for a 2D vdW heterostructure based on MSi2N4 with M=Sc and V. Phonon calculations demonstrate that both Sc- and V-based monolayers are dynamically stables. Furthermore, these monolayers exhibit ferromagnetic behavior, functioning as halfmetal and semimetal. When stacked, they demonstrate electronic transitions to metallic and half-metallic
states. The vdW heterostructure is investigated considering three different stackings, our results show that the T4 ordering is the most favorable configuration. Also, by the non-covalent interaction index, we corroborate that monolayers are interacting by vdW forces preserving the electronic texture and their ferromagnetic in-plane tendency. Moreover, despite this tendency, AFM and FM interactions between monolayers were found to be feasible in experiments, this represents a step towards silicon-based spintronic devices.
states. The vdW heterostructure is investigated considering three different stackings, our results show that the T4 ordering is the most favorable configuration. Also, by the non-covalent interaction index, we corroborate that monolayers are interacting by vdW forces preserving the electronic texture and their ferromagnetic in-plane tendency. Moreover, despite this tendency, AFM and FM interactions between monolayers were found to be feasible in experiments, this represents a step towards silicon-based spintronic devices.
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Presenters
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Brandon Pedroza
Universidad Autónoma del Estado de Hidalgo
Authors
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Brandon Pedroza
Universidad Autónoma del Estado de Hidalgo
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Rodrigo Ponce Perez
Universidad Nacional Autonoma de Mexico UNAM
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Ariadna Sánchez-Castillo
Escuela Superior de Apan, Universidad Autonónoma del Estado de Hidalgo