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2D Materials: Theory and Electronic Properties III

ORAL · MAR-N20 · ID: 3103315

Presentations

  • Negative differential resistance with high peak-to-valley ratio via subband resonant tunneling of Γ-valley carriers in WSe<sub>2</sub>/h-BN/WSe<sub>2</sub> junctions

    ORAL

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    Presenters

    • Kei Kinoshita

      Univ of Tokyo

    Authors

    • Kei Kinoshita

      Univ of Tokyo

    • Rai Moriya

      The University of Tokyo, Univ of Tokyo, Institute of Industrial Science, University of Tokyo

    • Seiya Kawasaki

      Univ of Tokyo

    • Shota Okazaki

      Science Tokyo

    • Momoko Onodera

      Univ of Tokyo

    • Yijin Zhang

      The University of Tokyo, Univ of Tokyo

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

    • Takashi Taniguchi

      National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

    • Takao Sasagawa

      Science Tokyo, Institute of Science Tokyo, Tokyo Inst of Tech - Yokohama

    • Tomoki Machida

      The University of Tokyo, Institute of Industrial Science, The University of Tokyo, Univ of Tokyo, Institute of Industrial Science, University of Tokyo

    View abstract →

  • Oral: Ultrahigh Electrostatic Energy Density in Au/2D-CuInP<sub>2</sub>Se<sub>6</sub>/Graphene Micro-Capacitor

    ORAL

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    Presenters

    • Roshan Padhan

      Jackson State University, 2Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA

    Authors

    • Roshan Padhan

      Jackson State University, 2Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA

    • Michael Adam Susner

      Air Force Research Laboratory (AFRL)

    • Rahul Rao

      Air Force Research Laboratory (AFRL)

    • Sujit A Kadam

      Jackson State University

    • Akshay Wali

      Argonne National Laboratory, Jackson State University

    • Ralu Divan

      Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory

    • Anirudha V Sumant

      Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory

    • Nihar Pradhan

      Jackson State University, 2Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA

    View abstract →

  • Structural, electronic and magnetic properties of the Van der Waals ScSi2N<sub>4</sub>/VSi2N<sub>4</sub> heterostructure: a first-principles study

    ORAL

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    Presenters

    • Brandon Pedroza

      Universidad Autónoma del Estado de Hidalgo

    Authors

    • Brandon Pedroza

      Universidad Autónoma del Estado de Hidalgo

    • Rodrigo Ponce Perez

      Universidad Nacional Autonoma de Mexico UNAM

    • Ariadna Sánchez-Castillo

      Escuela Superior de Apan, Universidad Autonónoma del Estado de Hidalgo

    View abstract →

  • Unleashing the potential of 2D cold metals for emerging nanoelectronics: From NDR tunnel diodes to FETs

    ORAL

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    Publication: [1] E. Sasioglu and I. Mertig, ACS Applied Nano Materials 6, 3758-3766 (2023).<br>[2] P. Bodewei, E. Sasioglu, N.F. Hinsche, and I. Mertig, Phys. Rev. Applied 22, 014004 (2024).<br>[3] E. Sasioglu, P. Bodewei, N.F. Hinsche, and I. Mertig (unpublished).

    Presenters

    • Ersoy Sasioglu

      Martin Luther University Halle-Wittenberg

    Authors

    • Ersoy Sasioglu

      Martin Luther University Halle-Wittenberg

    • Paul Bodewei

      Martin Luther University Halle-Wittenberg

    • Nicki F Hinsche

      Martin Luther University Halle-Wittenberg

    • Ingrid Mertig

      Martin Luther University Halle-Wittenberg

    View abstract →

  • Characterization of Flux-Grown Hexagonal Boron Nitride for Encapsulated 2D Material Devices

    ORAL

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    Presenters

    • Michael Mastalish

      University of Arkansas

    Authors

    • Michael Mastalish

      University of Arkansas

    • Santosh Karki Chhetri

      University of Arkansas, university of arkansas

    • Ashby Philip John

      University of Arkansas

    • Tallisen Scott

      Oberlin College

    • Elena Lotti

      University of Massachusetts Dartmouth

    • Evans Addo-Mensah

      University of Arkansas

    • Casper McPherson

      University of Arkansas

    • Nathan T Sawyers

      University of Arkansas

    • Shiva Davari Dolatabadi

      University of Arkansas

    • Md Rafique Un Nabi

      University of Arkansas

    • Janet Obaemo

      University of Arkansas

    • Mohammad Hafijur Rahaman

      University of Arkansas

    • Alton Holscher

      University of Arkansas

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

    • Takashi Taniguchi

      National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

    • Jin Hu

      University of Arkansas

    • Hugh O. H. Churchill

      University of Arkansas

    View abstract →

  • Quantum transport in two-dimensional Tellurium flakes

    ORAL

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    Presenters

    • Mohammad Hafijur Rahaman

      University of Arkansas

    Authors

    • Mohammad Hafijur Rahaman

      University of Arkansas

    • Nathan T Sawyers

      University of Arkansas

    • Mourad Benamara

      University of Arkansas

    • Zainul Aabdin Khan

      Institute of Materials Research and Engineering (IMRE)

    • Qiyuan He

      City University of Hong Kong

    • Hugh O. H. Churchill

      University of Arkansas

    • Dharmraj Kotekar Patil

      University of Arkansas

    View abstract →

  • Tunable n-type and p-type Doping in MoS<sub>2</sub> by Co-Sputtering for Electronic Applications

    ORAL

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    Publication: Shisheng Li. et al., Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics. Adv. Sci. 2021, 8, 2004438.<br>Rehan Younas et al., A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities. Appl. Phys. Lett. 122, 160504 (2023) <br>Yan Wang et al., P-type electrical contacts for 2D transition-metal dichalcogenides. Nature | Vol 610 | 6 October (2022)

    Presenters

    • Jian Zih-Siang

      National Yang Ming Chiao Tung University, Research Center for Critical Issues, Academia South Sinica

    Authors

    • Jian Zih-Siang

      National Yang Ming Chiao Tung University, Research Center for Critical Issues, Academia South Sinica

    • YEN JIE-RU

      National Yang Ming Chiao Tung University

    • TSENG HUAI-EN

      National Yang Ming Chiao Tung University

    • Wen-Hao Chang

      National Yang Ming Chiao Tung University, Research Center for Critical Issues, Academia South Sinica, Research Center for Applied Sciences, Academia Sinica, National Yang Ming Chiao Tung University

    View abstract →

  • The Odd/ Even Effect in Pentagonal Few-Layer PdSe2

    ORAL

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    Presenters

    • Yuxin Zhang

      Ohio State University

    Authors

    • Yuxin Zhang

      Ohio State University

    • Yuxin Zhang

      Ohio State University

    • Ziling Li

      Ohio state university, Ohio State University

    • Dmitry Smirnov

      National High Magnetic Field Laboratory

    • Roland K Kawakami

      Ohio State University

    • Joshua E Goldberger

      Ohio State University

    • Fan Zhang

      University of Texas at Dallas

    • ChunNing Lau

      Ohio State University, Department of Physics, The Ohio State University

    View abstract →

  • Gating graphene with a semiconductor

    ORAL

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    Publication: Preprint: Randy Sterbentz, , Bogyeom Kim, Anayeli Flores-Garibay, Kristine L. Haley, Nicholas T. Pereira, Kenji Watanabe, Takashi Taniguchi, Joshua O. Island. "Gating graphene with a semiconductor." (2024). <https://arxiv.org/abs/2410.06432>

    Presenters

    • Randy M Sterbentz

      University of Nevada, Las Vegas

    Authors

    • Randy M Sterbentz

      University of Nevada, Las Vegas

    • Kristine L Haley

      University of Nevada, Las Vegas

    • Joshua O Island

      University of Nevada, Las Vegas

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

    • Takashi Taniguchi

      National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

    • Bogyeom Kim

      University of Nevada, Las Vegas

    • Nicholas T Pereira

      University of Nevada, Las Vegas

    • Anayeli Flores-Garibay

      University of Nevada, Las Vegas

    View abstract →

  • Thermoelectric Transport Driven by Quantum Distance

    ORAL

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    Publication: arXiv:2408.04436

    Presenters

    • Changgeun Oh

      The Univeristy of Tokyo

    Authors

    • Changgeun Oh

      The Univeristy of Tokyo

    • Jun-Won Rhim

      Ajou University, Department of Physics, Ajou University

    • Kun Woo Kim

      Chung-Ang University

    View abstract →