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Spin-defect characteristics of single sulfur vacancies in monolayer MoS<sub>2</sub>

ORAL

Abstract

Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-spectroscopy to B=27T from three emission lines of deterministically induced sulfur vacancies in monolayer MoS2 [1]. The distinct valley-Zeeman splitting and the brightening of dark states necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of the defect luminescence. Analysis of the optical degree of circular polarization as a function of magnetic field and gate voltage reveals that the Fermi level is a parameter that enables the tunability of the emitter. These combined results show that defects in 2D semiconductors may be utilized for quantum technologies.

[1] A. Hötger et al., arXiv: 2205.10286, to appear (2022)

Publication: arXiv: 2205.10286

Presenters

  • Andreas V Stier

    Technische Universität München, Walter Schottky Institut, Technical University of Munich

Authors

  • Andreas V Stier

    Technische Universität München, Walter Schottky Institut, Technical University of Munich

  • Alexander Hötger

    Technische Universität München, Walter Schottky Institut

  • Tomer Amit

    Weizmann Institute of Science

  • Julian Klein

    Massachusetts Institute of Technology

  • Katja Barthelmi

    Technische Universität München, Walter Schottky Institut

  • Thomas Pelini

    Laboratoire National des Champs Magnetiques Intenses

  • Alex Delhomme

    Walter Schottky Institut, Technisch Universität München

  • Marek Potemski

    CNRS/GHMFL

  • Clement Faugeras

    Laboratoire National des Champs Magnetiques Intenses

  • Galit Cohen

    Weizmann Institute of Science

  • Daniel Hernangomez-Perez

    Weizmann Institute of Science

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Christoph Kastl

    TU Munich

  • Jonathan J Finley

    Technische Universität München, Walter Schottky Institut, Technical University of Munich

  • Alexander Holleitner

    TU Munich, Technical University of Munich