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Defects in Low-dimensional Materials

ORAL · Z41 · ID: 1096043






Presentations

  • Spin-valley coupling in defect-bound electrons in a MoS<sub>2</sub> transistor

    ORAL

    Publication: Manuscript under preparation.

    Presenters

    • Sangram Biswas

      Nanyang Technological University

    Authors

    • Sangram Biswas

      Nanyang Technological University

    • Radha Krishnan

      Nanyang Technological University

    • Yu-Ling Hsueh

      University of New South Wales, UNSW

    • Rajib Rahman

      University of New South Wales, 1) University of New South Wales

    • Bent Weber

      Nanyang Technological University

    View abstract →

  • In-plane InAs nanowires with buffer and capping layers by molecular beam epitaxy selective area growth

    ORAL

    Presenters

    • Pradip Adhikari

      University of Tennessee

    Authors

    • Pradip Adhikari

      University of Tennessee

    • Anjali Rathore

      University of Tennessee

    • Bernadeta R Srijanto

      Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge National Labs, Center for Nanophase Materials

    • Joon Sue Lee

      University of Tennessee, Knoxville

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  • Examining the Relationship between Dislocations and Nanoparticle Morphology

    ORAL

    Presenters

    • Zachary J Barringer

      Rensselaer Polytechnic Institute

    Authors

    • Zachary J Barringer

      Rensselaer Polytechnic Institute

    • Edwin Fohtung

      Rensselaer Polytechnic Institute

    • Nimish P Nazirkar

      Rensselaer Polytechnic Institute

    • Xiaowen Shi

      Rensselaer Polytechnic Institute

    • Skye Williams

      Rensselaer Polytechnic Institute

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  • Bandgap engineering in III-V nanowires by post-growth hydrogen implantation

    ORAL

    Publication: Bandgap engineering in III-V nanowires by post-growth hydrogen implantation, N.Denis et al., in preparation<br>Adressing the phononic properties of dilute GaAsN nanowires after bandgap engineering by hydrogen implantation, N.Denis et al., in preparation<br>H-passivation of N-induced perturbation potentials in diluted GaAsN nanowires studied by temperature dependent photoluminescence spectroscopy, N.Denis et al., in preparation

    Presenters

    • Nadine Denis

      Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland

    Authors

    • Nadine Denis

      Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland

    • Elena Blundo

      Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 5, Roma, Italy

    • Ada Krasnovsky

      Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland

    • Ilaria Zardo

      Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland, University of Basel

    • Mitsuki Yukimune

      Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan

    • Fumitaro Ishikawa

      Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan, Hokkaido University

    • Antonio Polimeni

      Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 5, Roma, Italy

    • Marta De Luca

      Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 5, Roma, Italy

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  • Scanning Tunneling Microscopy Study of Vibronic Coupling due to Charged Impurity in Monolayer WS2 on Graphite

    ORAL

    Presenters

    • Lisa Frammolino

      University of Texas at Austin, The University of Texas at Austin

    Authors

    • Lisa Frammolino

      University of Texas at Austin, The University of Texas at Austin

    • Madisen A Holbrook

      University of Texas at Austin, Columbia University

    • Hyunsue Kim

      University of Texas at Austin

    • Andrew Murphy

      University of Texas at Austin, University of Texas

    • Chih-Kang Shih

      University of Texas at Austin

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  • Printing homogeneous single-layer oxidized graphene (SOG) via excimer UV for engineering graphene FETs

    ORAL

    Publication: 1- Raman spectroscopy for the study of oxidation mechanism and chemical composition in photochemically oxidizes single-layer graphene (SOG) <br>2- Printing homogeneous single-layer oxidized graphene (SOG) via excimer UV for engineering graphene FETs

    Presenters

    • MOHD MUSAIB HAIDARI

      Konkuk University

    Authors

    • MOHD MUSAIB HAIDARI

      Konkuk University

    • Jin Hong Kim

      Republic of Korea, Seoul, Konkuk university

    • Jin Sik Choi

      Republic of Korea, Seoul, Konkuk University

    View abstract →

  • Dislocations as natural quantum wires in Diamond

    ORAL

    Presenters

    • Sevim Polat Genlik

      Ohio State University-Columbus

    Authors

    • Sevim Polat Genlik

      Ohio State University-Columbus

    • Roberto C Myers

      Ohio State Univ - Columbus

    • Maryam Ghazisaeidi

      Ohio State University - Columbus, Ohio State University, The Ohio State University

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  • p-type degenerate doping of 2H-MoTe<sub>2</sub>

    ORAL

    Presenters

    • Anjaly Rajendran

      Columbia University

    Authors

    • Anjaly Rajendran

      Columbia University

    • HaeYeon Lee

      Columbia university, Department of Mechanical Engineering, Columbia University

    • Luke N Holtzman

      Columbia University

    • Song Liu

      Columbia University

    • Katayun Barmak

      Columbia Univ, Columbia University

    • James C Hone

      Columbia University

    View abstract →

  • Spin-defect characteristics of single sulfur vacancies in monolayer MoS<sub>2</sub>

    ORAL

    Publication: arXiv: 2205.10286

    Presenters

    • Andreas V Stier

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

    Authors

    • Andreas V Stier

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

    • Alexander Hötger

      Technische Universität München, Walter Schottky Institut

    • Tomer Amit

      Weizmann Institute of Science

    • Julian Klein

      Massachusetts Institute of Technology

    • Katja Barthelmi

      Technische Universität München, Walter Schottky Institut

    • Thomas Pelini

      Laboratoire National des Champs Magnetiques Intenses

    • Alex Delhomme

      Walter Schottky Institut, Technisch Universität München

    • Marek Potemski

      CNRS/GHMFL

    • Clement Faugeras

      Laboratoire National des Champs Magnetiques Intenses

    • Galit Cohen

      Weizmann Institute of Science

    • Daniel Hernangomez-Perez

      Weizmann Institute of Science

    • Takashi Taniguchi

      National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

    • Kenji Watanabe

      National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

    • Christoph Kastl

      TU Munich

    • Jonathan J Finley

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

    • Alexander Holleitner

      TU Munich, Technical University of Munich

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  • Vanadium-vacancy defect complexes in monolayer tungsten diselenide

    ORAL

    Presenters

    • Jingda Zhang

      National University of Singapore

    Authors

    • Jingda Zhang

      National University of Singapore

    • Leyi Loh

      National University of Singapore

    • Michel Bosman

      National University of Singapore

    • Goki Eda

      National University of Singapore

    • Su Ying Quek

      National University of Singapore, Natl Univ of Singapore

    View abstract →