Reconfigurable Logic Transistors Based on 2D Heterostructures

Reconfigurable transistors can enable the design of highly compact logic circuits to realize more complex systems due to their ability to program polarity during run-time. Two-dimensional (2D) atomically thin transition metal dichalcogenides (TMDC) are of particular interest as the channel material for reconfigurable transistors because of their unique gate-tunable electronic properties. Reconfigurable transistors based on ambipolar 2D semiconductors, such as MoTe2, have been previously demonstrated. However, the relatively large bandgap of MoTe2 resulted in insufficient on-state current. Here, we introduce electrostatically reconfigurable transistors based on vertical and lateral TMDC heterostructures. The external vertical electric field in the source/drain contact regions can selectively facilitate one type of carrier injection, hence controlling the polarity of the device. Strong and tunable unipolar conduction was achieved for reconfigurable transistors based on vertical and lateral TMDC heterostructures with two different measurement setups. These reconfigurable logic devices possess the potential to function as critical components for next-generation computing systems.