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Semiconductor Materials for Beyond CMOS Electronics

ORAL · Q34 · ID: 1114175

Presentations

  • Interfacial Engineering on Metal/2D Material Interfaces

    ORAL

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    Publication: [1] Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217(2021) <br>[2] High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts. IEEE Electron Device Letters, 42 (2), 272-275 (2021)<br>

    Presenters

    • Chih-I Wu

      National Taiwan University

    Authors

    • Chih-I Wu

      National Taiwan University

    • I-Chi Ni

      National Taiwan University

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  • Understanding of the Interaction between Electrical and Thermal Properties on Bifunctional Memristors and Reprogrammable Memory

    ORAL

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    Publication: [1] S. Jung, H. Lee, S. Myung et al., "A crossbar array of magnetoresistive memory devices for in-memory computing," Nature, vol 601, pp. 211–216, 2022. <br>[2] M. R. Azghadi, Y-C Chen, J. K. Eshraghian, J. Chen, C-Y Lin, A. Amirsoleimani, A. Mehonic, A. J. Kenyon, B. Fowler, J. C Lee, and Y-F Chang, "Complementary metal-oxide semiconductor and memristive hardware for neuromorphic computing" Adv. Intelligent Syst., vol. 2, no. 5, 1900189, 2020. <br>[3] B.Cambou, Y-C Chen, "Tamper sensitive ternary ReRAM-based PUFs," Intelligent Computing, Networks and Syst., vol 285, 2021.<br>[4] W. Y. Yang et al., IEEE Int. Electron. Devices Meeting (IEDM), 2020. <br>[5] W. Y. Yang, E. R. Hsieh, C. H. Cheng and S. S. Chung, 2020 IEEE Silicon Nanoelectronics Workshop (SNW), pp. 23-24, 2020.<br>[6] E. R. Hsieh et al., 2019 Symp. VLSI Tech, pp. T118-T119, 2019.<br>[7] E. Hunt-Schroeder et al., 2018 IEEE Symp. VLSI Circuits, pp. 87-88, 2018.<br>[8] S. Chou et al., 2021 Symp. VLSI Circuits, pp. 1-2, 2021.<br>[9] Z. Chen, et al., "A 0.9-µm² 1T-1R bit cell in 14-nm high-density metal Fuse technology for high-volume manufacturing and in-field programming," IEEE J Solid-State Circuits, vol 52, pp. 933-939, 2017.<br>[10] S. H. Kulkarni, et al., "A 5-V-program 1-V-sense anti-fuse technology featuring on-demand sense and integrated power delivery in a 22-nm ultra-low power FinFET process," IEEE Solid-State Circuits Letters, vol 4, pp. 2-5, 2020.<br>[11] O. Golonzka et al., "Non-volatile RRAM embedded into 22FFL FinFET technology," Symp. VLSI Techn., pp. T230-T231, 2019.<br>[12] Y. F. Chang, et al. "Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability," IEEE Int. Reliability Physics Symp. (IRPS), pp. 1-5, 2021.<br>[13] D. Ielmini, "Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks," Microelectronic Eng., vol 190, pp. 44-53, 2018.<br>[14] Y. C. Chen, C.Y. Lin, H. Cho et al., "Current-sweep operation on nonlinear selectorless RRAM for multilevel cell applications." J. Electron. Mater. Vol. 49, pp. 3499–3503, 2020.<br>[15] S.H. Choi, S.O. Park, S. Seo, S. Choi, "Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer," Sci Adv, vol 8, p. 3, 2022.<br>[16] S. Gao, F. Zeng, F. Li, M. Wang, H. Mao, G. Wang, C. Song, and F. Pan, "Forming-free and self-rectifying resistive switching of the simple Pt/TaO x/n-Si structure for access device-free high-density memory application," Nanoscale, vol 7, no. 14, pp. 6031-60, 2015.<br>[17] J. Woo, and S. Yu, "Two-step read scheme in one-selector and one-RRAM crossbar-based neural network for improved inference robustness," IEEE Trans Electron Devices, vol 65, no. 12, pp. 5549-5553, 2018.<br>[18] E. Cha, J. Park, J. Woo, D. Lee, A. Prakash, and H. Hwang, "Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application," Applied Physics Letters, vol. 108, no. 15, p. 153502, 2016.<br>[19] Y. Kalcheim, A. Camjayi, J. D. Valle, P. Salev, M. Rozenberg, and I. K. Schuller, "Non-thermal resistive switching in Mott insulator nanowires," Nature Comm, vol 11, no. 1, pp. 1-9, 2020.<br>[20] J. -J. Huang, Y.-M. Tseng, C.-W. Hsu, and T.-H. Hou, "Bipolar nonlinear $hbox {Ni/TiO} _ {2}hbox {/}hbox {Ni} $ Selector for 1S-1R crossbar array applications," IEEE Electron Device Letters, vol 32, no. 10, pp. 1427-1429, 2011.<br>[21] G. Jang, M. Park, W. J. Kim, J. Y. Yang, and J. P. Hong, "Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing," Scientific Reports, vol 10, no. 1, pp. 1-9, 2020

    Presenters

    • Justin B Stouffer

      Northern Arizona University

    Authors

    • Justin B Stouffer

      Northern Arizona University

    • Ying-Chen Chen

      Northern Arizona University

    • Yao-Feng Chang

      Intel Corporation, Hillsboro

    • Yifu Huang

      University of Texas at Austin

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  • Contact-Induced Oxygen Scavenging in Indium Tin Oxide Transistors

    ORAL

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    Presenters

    • Sumaiya Wahid

      Stanford University

    Authors

    • Sumaiya Wahid

      Stanford University

    • Mahnaz Islam

      Stanford University, Electrical Engineering, Stanford University

    • Christopher Perez

      Stanford University, USA, Stanford University, Mechanical Engineering, Stanford University

    • Timothy D Brown

      Sandia CA, Sandia National Laboratories, Sandia National Laboratories, CA

    • Michelle E Chen

      Stanford University

    • Matthew A Marcus

      Lawrence Berkeley National Laboratory

    • Hendrik Ohldag

      Lawrence Berkeley National Laboratory

    • Suhas Kumar

      Stanford University, Sandia National Laboratories, Sandia National Laboratories, CA, Sandia National Labs

    • Eric pop

      Stanford Univ, Stanford University, USA, Stanford University, Electrical Engineering, Stanford University

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  • Image force derivation and application to two-dimensional materials contacts

    ORAL

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    Publication: Deylgat, E. et al. Solid-State Electronics. (2022). <br>Evans, S. et al. (2022/2023).

    Presenters

    • Emeric Deylgat

      The University of Texas at Dallas

    Authors

    • Emeric Deylgat

      The University of Texas at Dallas

    • Sarah R Evans

      University of Texas at Dallas

    • Edward Chen

      Taiwan Semiconductor Manufacturing Company

    • Massimo V Fischetti

      University of Texas at Dallas

    • Bart Soree

      IMEC

    • William G. Vandenberghe

      University of Texas at Dallas

    View abstract →

  • Atomic silicon wires: dopant mediated charging characterization

    ORAL

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    Presenters

    • Max Yuan

      University of Alberta

    Authors

    • Max Yuan

      University of Alberta

    • Roshan Achal

      Univ of Alberta, University of Alberta

    • Jeremiah Croshaw

      Univ of Alberta, University of Alberta

    • Robert A Wolkow

      Univ of Alberta, University of Alberta

    • Taras Chutora

      University of Alberta

    • Jason Pitters

      Quantum Silicon, National Research Council Canada

    • Lucian Livadaru

      Quantum Silicon, Quantum Silicon Inc.

    • Furkan M Altincicek

      University of Alberta

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  • Theory of electron transport in direct-gap Ge<sub>1-x</sub>Sn<sub>x</sub> group-IV alloys

    ORAL

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    Presenters

    • Christopher A Broderick

      University of California, Santa Barbara

    Authors

    • Christopher A Broderick

      University of California, Santa Barbara

    • Sarita Das

      Tyndall National Institute, University College Cork, Ireland

    • Michael D Dunne

      Tyndall National Institute, University College Cork, Ireland

    • Eoin P O'Reilly

      Tyndall National Institute, University College Cork, Ireland

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  • Temperature and barrier height tunable current mechanism of a reverse-bised graphene-WS<sub>2</sub> barristor junction

    ORAL

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    Publication: Choi, I., Jeong, N. bong, Kim, M., Yu, J., Chung, H.-J., Evolution of Reverse-Biased Current of a Barristor Junction by Varying Temperature and Barrier Height of the Junction. Adv. Electron. Mater. 2022, 2200761. https://doi.org/10.1002/aelm.202200761

    Presenters

    • INCHUL CHOI

      konkuk university

    Authors

    • INCHUL CHOI

      konkuk university

    • Nae Bong Jeong

      Konkuk university

    • Minjeong KIM

      Konkuk university

    • Jaeho Yu

      Konkuk university

    • Hyun-Jong Chung

      Konkuk university

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  • Quasi Van der Waals Epitaxiay of Magnetic Topological Insulator on GaAs (111) Substrate

    ORAL

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    Presenters

    • Yuxing Ren

      University of California, Los Angeles

    Authors

    • Yuxing Ren

      University of California, Los Angeles

    • Lixuan Tai

      University of California, Los Angeles

    • Hung-Yu Y Yang

      Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA, University of California, Los Angeles, Boston College

    • Xiang Dong

      University of California, Los Angeles

    • Ting-Hsun Yang

      University of California, Los Angeles

    • Yaochen Li

      University of California, Los Angeles

    • Kang Wang

      University of California, Los Angeles

    View abstract →