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Understanding of the Interaction between Electrical and Thermal Properties on Bifunctional Memristors and Reprogrammable Memory

ORAL

Abstract

In this work, an engineered sub-µm-scale via-type one-time programmable (OTP) memory and self-rectified resistive switching memory (ReRAM or Memristor) are demonstrated. The current development has achieved co-existing memory functionality (OTP and ReRAM) with mitigating scaling limitation (fuse voltage trending with via size scaling), low fabrication complexity (via-fuse vs. gate-dielectric anti-fuse), and matches with the current CMOS technology. In addition, an engineered electrode and stacking structures have been proposed to realize ultra-low programming voltage (~1.9V) in via-type OTP featuring by metal-insulator-metal advanced BEOL process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied using COMSOL Multiphysics Simulation tool to understand the interactions between the electrical and thermal properties on simple metal-insulator-metal device structures, where it exhibits dual functionality of ReRAM and OTP. The result shows that the switching gap contains the hottest temperature throughout the device, specifically in the low-k dielectric layer. Our results provide a pathfinding and an understanding of the mechanism dealing with high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and resistive switching memory co-existing in future embedded applications.

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Presenters

  • Justin B Stouffer

    Northern Arizona University

Authors

  • Justin B Stouffer

    Northern Arizona University

  • Ying-Chen Chen

    Northern Arizona University

  • Yao-Feng Chang

    Intel Corporation, Hillsboro

  • Yifu Huang

    University of Texas at Austin