Interfacial Engineering on Metal/2D Material Interfaces

Atomically thin two-dimensional (2D) semiconductors have great potential for realizing high-performance electronic devices. However, the performance of 2D material-based devices is frequently limited by the interfacial issues between and contact metal and 2D materials. In this presentation, we are going to present the latest results on the interfacial engineering of metal/2D materials in both transistors and interconnects. In the first part of the presentation, we report a high performance 2D-channel transistor with drive current compatible with Si devices. Through ultra-low contact technology between semimetal and semiconducting monolayer transition metal dichalcogenides (TMDs). We achieve a record high on-state current density (I_ON) of 1135 μA/μm on monolayer MoS2. The thermal stability of the 2D-channel transistor are improved with choice of various semimetals. The second part of the presentation, we will report the progress on applying the 2D materials in backend process. Graphene is deposited on Cu as capping layer at low temperature (< 400 C) and improve the electromigration effects. We also use CVD process to successfully form graphene layers around the Co line as liners at backend compatible temperature, which we expect could also improve the reliability of the Co interconnects.