First-principles studies of the role of cation disorder on electronic structure of ZnTiN<sub>2</sub>
ORAL
Abstract
Cation disorder is often found in divalent ternary nitride semiconductors, with significant consequences for optoelectronic properties. For example, recently synthesized wurtzite-derived ZnTiN2 exhibits cation disorder on its Zn and Ti sites, and has a measured band gap of about 2 eV, 1.5 eV smaller than that predicted for its cation-ordered structure by density functional theory (DFT) calculations with hybrid functionals [1]. ZnTiN2 has great potential in photoelectric applications due to its band gap in the visible, good integration with high-performing semiconductors, and the potential for a stable self-passivating surface layer (e.g., ZnO, TiO2) under operating conditions. Using state-of-the-art first principles DFT calculations with optimally-tuned range-separated hybrid functionals, we demonstrate that cation disorder in ZnTiN2 creates locally charge-unbalanced nitrogen centered motifs that further introduce states near band edges, leading to band gap reduction. We study how the cation disorder affects local chemical environment, energetics, electronic structure, and optoelectronic properties in ZnTiN2 and discuss its properties in light of possible photocatalytic applications.
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Publication: [1] Greenaway, A. L.; Ke, S.; Culman, T.; Talley, K. R.; Mangum, J. S.; Heinselman, K. N.; Kingsbury, R. S.; Smaha, R. W.; Gish, M. K.; Miller, E. M.; Persson, K. A.; Gregoire, J. M.; Bauers, S. R.; Neaton, J. B.; Tamboli, A. C.; Zakutayev, A. Zinc Titanium Nitride Semiconductor toward Durable Photoelectrochemical Applications. J. Am. Chem. Soc. 2022, 144 (30), 13673–13687. https://doi.org/10.1021/jacs.2c04241.
Presenters
Sijia Ke
University of California, Berkeley
Authors
Sijia Ke
University of California, Berkeley
Jeffrey B Neaton
Lawrence Berkeley National Laboratory, University of California, Berkeley, Department of Physics, University of California, Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory; Kavli Energy NanoScience Institute at Berkeley