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Defects in Nitrides

FOCUS · G41 · ID: 1067034

Presentations

  • First-principles studies of the role of cation disorder on electronic structure of ZnTiN<sub>2</sub>

    ORAL

    –

    Publication: [1] Greenaway, A. L.; Ke, S.; Culman, T.; Talley, K. R.; Mangum, J. S.; Heinselman, K. N.; Kingsbury, R. S.; Smaha, R. W.; Gish, M. K.; Miller, E. M.; Persson, K. A.; Gregoire, J. M.; Bauers, S. R.; Neaton, J. B.; Tamboli, A. C.; Zakutayev, A. Zinc Titanium Nitride Semiconductor toward Durable Photoelectrochemical Applications. J. Am. Chem. Soc. 2022, 144 (30), 13673–13687. https://doi.org/10.1021/jacs.2c04241.

    Presenters

    • Sijia Ke

      University of California, Berkeley

    Authors

    • Sijia Ke

      University of California, Berkeley

    • Jeffrey B Neaton

      Lawrence Berkeley National Laboratory, University of California, Berkeley, Department of Physics, University of California, Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory; Kavli Energy NanoScience Institute at Berkeley

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  • Identification of an Oxygen Defect in Hexagonal Boron Nitride

    ORAL

    –

    Publication: [1] Toledo, J.; Krambrock, K. J. Phys. D 2021, 54, 065303.<br>[2] Li, S.; Gali, A. Front. Quantum Sci. Technol. 2022, 1, 1007756.<br>[3] Li, S.; Gali, A. J. Phys. Chem. Lett. 2022, 13, 9544–9551.

    Presenters

    • Song Li

      Wigner Research Center for Physics

    Authors

    • Song Li

      Wigner Research Center for Physics

    • Adam Gali

      Wigner Research Centre for Physics, Wigner Research Centre

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  • Ion beam channeling studies of scandium incorporation into ScAlN

    ORAL

    –

    Publication: In preperation

    Presenters

    • Erdem Ozdemir

      University of Michigan

    Authors

    • Erdem Ozdemir

      University of Michigan

    • Joshua Cooper

      University of Michigan

    • Thai-Son Nguyen

      Cornell University

    • Joseph Casamento

      Cornell University

    • Debdeep Jena

      Cornell University

    • Huili Grace Xing

      Cornell University

    • Rachel S Goldman

      University of Michigan

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  • Transport properties of heavily Si doped high Al mole fraction Al<sub>x</sub>Ga<sub>1−x</sub>N grown by MBE on single-crystal AlN substrates

    ORAL

    –

    Publication: Planned paper: Silicon doping and electron transport of high aluminum content AlxGa1-xN grown by molecular beam epitaxy on single-crystal aluminum nitride substrates

    Presenters

    • Chandrashekhar P Savant

      Cornell University, Cornell Uiversity

    Authors

    • Chandrashekhar P Savant

      Cornell University, Cornell Uiversity

    • Ryan Page

      Cornell University

    • Thai-Son Nguyen

      Cornell University

    • Kevin Lee

      Cornell University

    • Vladimir Protasenko

      Cornell University

    • Huili Grace Xing

      Cornell University

    • Debdeep Jena

      Cornell University

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  • Extending the room temperature spin coherence time of boron vacancies in hexagonal boron nitride

    ORAL

    –

    Publication: [1] Enhancing the room temperature spin coherence time of boron vacancies for dynamical quantum sensing (in preparation)<br>[2] https://arxiv.org/abs/2210.00150<br>[3] https://arxiv.org/abs/2202.10980

    Presenters

    • Andreas V Stier

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

    Authors

    • Martin Schalk

      Technical University of Munich

    • Andreas V Stier

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

    • Roberto Rizzato

      Technical University of Munich

    • Chenjiang Qian

      Technical University of Munich

    • Stephan Mohr

      Technical University of Munich

    • Joachim P Leibold

      Technical University of Munich, Technische Universität München, Garching, Germany

    • Georgy V Astakhov

      Helmholtz-Zentrum Dresden-Rossendorf, Helmholtz-Zentrum Dresden Rossendorf

    • Ulrich Kentsch

      Helmholtz-Zentrum Dresden-Rossendorf

    • Manfred Helm

      Helmholtz-Zentrum Dresden-Rossendorf

    • Dominik Bucher

      Technical University of Munich, Technische Universität München, Garching, Germany

    • Jonathan J Finley

      Technische Universität München, Walter Schottky Institut, Technical University of Munich

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