Effect of electric field on the O_vac in low dimensional β-Ga₂O₃ for non-volatile memory application

Several decades have been devoted to the development of a scalable universal memory cell capable of combining the speed of DRAM with the nonvolatility of FLASH memory. Resistive-switching random access memory (ReRAM) is one of the prospective non-volatile technologies that is often investigated by researchers. Some of the key benefits of ReRAM are scaling possibilities, low-power operation, high-speed, and compatibility with existing CMOS technologies. Although the scientific community has thoroughly researched dielectric thin films as resistive switching materials, the viability of low-dimensional (LD) materials has received little attention. For many decades, beta phase gallium oxide (β-Ga₂O₃) has been researched as a prospective candidate for numerous semiconductor device applications. The oxygen vacancy in the metal oxide ReRAM is the most important aspect of switching in the dielectric switching material; thus, it is essential to examine their reaction to the electric field for future advancements. The purpose of this study is to conduct a theoretical and experimental assessment of the RS phenomena in planar and vertical LD: β-Ga₂O₃ nanostructures. The LD: β-Ga₂O₃resistive memory devices were experimentally verified using VLS-grown nanostructures. Physical and chemical characterizations of the as-grown nanostructures confirmed the existence of spontaneous defects, including oxygen vacancies. Meanwhile, the underlying physical and electrical characteristics of comparable structures corresponding with the DFT framework have been modeled through the QuantumATK package. And the effect of electric field in the planar and vertical device structure on the oxygen vacancies in the LD: β-Ga₂O₃ is reported through the electrical characteristics.