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Defects in Gallium Oxide

FOCUS · B41 · ID: 1067030

Presentations

  • Transition metals as shallow donors in Ga2O3

    ORAL

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    Presenters

    • Siavash Karbasizadeh

      University of California, Santa Barbara

    Authors

    • Siavash Karbasizadeh

      University of California, Santa Barbara

    • Sai Mu

      University of South Carolina

    • Chris G Van de Walle

      University of California, Santa Barbara

    View abstract →

  • Atomic-displacement threshold energies and defect generation in irradiated β-Ga<sub>2</sub>O<sub>3 </sub>: a first-principles investigation

    ORAL

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    Presenters

    • Blair Tuttle

      Penn State Univ, Erie

    Authors

    • Blair Tuttle

      Penn State Univ, Erie

    • Nathaniel Karom

      Allegheny College

    • Andrew O'Hara

      Department of Physics and Astronomy, Vanderbilt University, Vanderbilt University

    • Ronald D Schrimpf

      Department of Electrical and Computer Engineering, Vanderbilt University, Vanderbilt University

    • Sokrates T Pantelides

      Vanderbilt University, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University

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  • Defect and Dopant Characterization using Terahertz Electron Paramagnetic Resonance Ellipsometry: Fe in Ga<sub>2</sub>O<sup>3</sup>

    ORAL

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    Publication: M. Schubert et al., Appl. Phys Lett. 120, 102101(2022).

    Presenters

    • Mathias M Schubert

      University of Nebraska-Lincoln, University of Nebraska - Lincoln

    Authors

    • Mathias M Schubert

      University of Nebraska-Lincoln, University of Nebraska - Lincoln

    • Rafal Korlacki

      University of Nebraska - Lincoln

    • Steffen Richter

      Lund University

    • Sean Knight

      Lund University

    • Philipp Kuehne

      Linkoping University

    • Vallery Stanishev

      Lund University

    • Megan Stokey

      University of Nebraska-Lincoln

    • Zbigniew Galazka

      Leibniz-Institut für Kristallzüchtung, Leibniz Institute for Crystal Growth

    • Klaus Irmscher

      Leibniz Institute for Crystal Growth

    • Vanya Darakchieva

      Linköping University, Lund University

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  • Uniform and controlled Si doping of Ga<sub>2</sub>O<sub>3 </sub>by disilane via hybrid molecular beam epitaxy

    ORAL

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    Publication: 1. F. Alema, Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown b-Ga2O3," APL Mater. 7, 121110 (2019).<br>2. Z. Feng, A. F. Anhar Uddin Bhuiyan, M. R. Karim, and H. Zhao, "MOCVD homoepitaxy of Si-doped (010) b-Ga2O3 thin films with superior transport properties," Appl. Phys. Lett. 114, 250601 (2019).<br>3. Y. Zhang, F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial b-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature," APL Mater. 7, 022506 (2019).<br>4. S. Rafique, M. R. Karim, J. M. Johnson, J. Hwang, and H. Zhao, "LPCVD homoepitaxy of Si doped b-Ga2O3 thin films on (010) and (001) substrates," Appl. Phys. Lett. 112, 052104 (2018).<br>5. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, and G. Wagner, "Semiconducting Sn-doped b-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy," J. Mater. Sci. 51, 3650–3656 (2016).<br>6. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner, "Si- and Sn-doped homoepitaxial b-Ga2O3 layers grown by MOVPE on (010)- oriented substrates," ECS J. Solid State Sci. Technol. 6, Q3040 (2017).<br>7. K. D. Leedy, K. D. Chabak, V. Vasilyev, D. C. Look, J. J. Boeckl, J. L. Brown, S. E. Tetlak, A. J. Green, N. A. Moser, A. Crespo, D. B. Thomson, R. C. Fitch, J. P. McCandless, and G. H. Jessen, "Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) b-Ga2O3 by pulsed laser deposition," Appl. Phys. Lett. 111, 012103 (2017).<br>8. N. K. Kalarickal, Z. Xia, J. McGlone, S. Krishnamoorthy, W. Moore, M. Brenner, A. R. Arehart, S. A. Ringel, and S. Rajan, "Mechanism of Si doping in plasma assisted MBE growth of b-Ga2O3," Appl. Phys. Lett. 115, 152106 (2019).<br>9. E. Ahmadi, O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of b-Ga2O3 films grown by plasma-assisted molec- ular beam epitaxy," Appl. Phys. Express 10, 041102 (2017).<br>10. N. Moser, J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, N. Peixoto, and G. Jessen, "Ge-doped b-Ga2O3 MOSFETs," IEEE Electron Device Lett. 38, 775–778 (2017).<br>11. H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, "Systematic investigation of the growth rate of b-Ga2O3 (010) by plasma-assisted molecular beam epitaxy," Appl. Phys. Express 7, 095501 (2014).<br>12. S.-H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) b-Ga2O3 grown on (001) b-Ga2O3 substrates by plasma- assisted molecular beam epitaxy," Semicond. Sci. Technol. 33, 045001 (2018).<br>13. A. Mauze, Y. Zhang, T. Itoh, E. Ahmadi, and J. S. Speck, "Sn doping of (010) b-Ga2O3 films grown by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 117, 222102 (2020).<br>14. K. Sasaki, A. Kuramata, T. Masui, G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality b-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy," Appl. Phys. Express 5, 035502 (2012).<br>15. P. Vogt, F. V. Hensling, K. Azizie, C. S. Chang, D. Turner, J. Park, J. P. McCandless, H. Paik, B. J. Bocklund, G. Hoffman, O. Bierwagen, D. Jena, H. G. Xing, S. Mou, D. A. Muller, S. L. Shang, Z. K. Liu, and D. G. Schlom, "Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy," APL Mater. 9, 031101 (2021).<br>16. J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T.J. Asel, S. Mou, P. Vogt, and H.G. Xing, "Controlled Si doping of ß-Ga2O3 by molecular beam epitaxy." Appl. Phys. Lett. 121, 7, 072108 (2022).

    Presenters

    • Zhuoqun Wen

      University of Michigan

    Authors

    • Zhuoqun Wen

      University of Michigan

    • Elaheh Ahmadi

      University of Michigan

    • Kamruzzaman Khan

      University of Michigan

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  • H trapping at the metastable cation vacancy in α-Ga<sub>2</sub>O<sub>3</sub> and α-Al<sub>2</sub>O<sub>3</sub>

    ORAL

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    Publication: Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, and Stephen J. Pearton , "H trapping at the metastable cation vacancy in a-Ga2O3 and a-Al2O3", Appl. Phys. Lett. 120, 192101 (2022) https://doi.org/10.1063/5.0094707

    Presenters

    • Andrew B Venzie

      Lehigh University

    Authors

    • Andrew B Venzie

      Lehigh University

    • Amanda Portoff

      Lehigh University

    • Michael B Stavola

      Lehigh Univ, Lehigh University

    • W B Fowler

      Lehigh University

    • Stephen J Pearton

      University of Florida

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  • Chip-Scale Electron Spin Resonance Spectroscopy of Spin-Active Defects in Epitaxial β-Ga<sub>2</sub>O<sub>3</sub>

    ORAL

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    Presenters

    • Arjan Singh

      Cornell University

    Authors

    • Arjan Singh

      Cornell University

    • Jimy Encomendero

      Cornell University

    • Felix V Hensling

      Cornell University

    • Kathy Azizie

      Cornell University

    • Vladimir Protasenko

      Cornell University

    • Kazuki Nomoto

      Cornell University

    • Darrell G Schlom

      Cornell University, Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Materials Science and Engineering, Cornell University

    • Debdeep Jena

      Cornell University

    • Huili Grace Xing

      Cornell University

    • Farhan Rana

      Cornell University

    View abstract →

  • Self-Trapped Hole in Ultra Wide Bandgap β-Ga2O3 Films; Its Temperature Dependent Luminescences

    ORAL

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    Publication: [1] J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle, "Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides," Phys. Rev. B, vol. 85, no. 8, p. 081109, Feb. 2012, doi: 10.1103/PhysRevB.85.081109.<br><br>[2] D. Thapa, J. Lapp, I. Lukman, and L. Bergman, "Ultra-wide bandgap ß-Ga2O3 films: Optical, phonon, and temperature response properties," AIP Adv., vol. 11, no. 12, p. 125022, Dec. 2021, doi: 10.1063/5.0074697.

    Presenters

    • Isiaka O Lukman

      University of Idaho

    Authors

    • Isiaka O Lukman

      University of Idaho

    • Leah Bergman

      university of Idaho

    View abstract →