Reversible control of MIT in VO₂ heterostructure using electric double layer transistor

Vanadium dioxide (VO₂) undergoes a temperature-driven metal-to-insulator transition (MIT) near room temperature. The transition temperature (T_MIT) of VO₂ can be varied by external perturbation like atomic doping, strain in thin films, or by applying an external electric field using an electric double-layer transistor (EDLT). However, all these methods depreciate the crystal structure by creating atomic defects and hence making this MIT irreversible. In this study, we demonstrate a reversible control of MIT in VO₂ using an electric double-layer transistor (EDLT), fabricated on VO₂-based modulation-doped heterostructure. Atomically smooth single crystalline VO₂ (001) heterostructures (10 nm thick) were grown using pulsed laser deposition. We first discuss device fabrication protocols that we employed to ensure that the MIT in fabricated devices is unchanged during fabrication. Next, using EDLT measurements, we discuss the possibility of reversibly controlling the resistivity change of VO₂ heterostructures across the metal insulator transition. We further discuss the implications of our research for a pure electronic control of MIT in VO₂.