Metal-Insulator Transitions: Experiment
ORAL · B30 · ID: 1119367
Presentations
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Quantifying Joule heating in voltage-biased VO<sub>2</sub> thin films using atomic force microscopy
ORAL
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Publication: Spitzig et al. Apple. Phys. Lett. 120, 151602 (2022)
Presenters
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Jason D Hoffman
Harvard
Authors
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Jason D Hoffman
Harvard
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Alyson Spitzig
Harvard University
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Dilek Yildiz
NIST / JQI - Physics department UMD, Harvard University
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Jenny E Hoffman
Harvard University
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Band structure effects of a current-induced Mott-insulator to metal transition in Ca<sub>2</sub>RuO<sub>4</sub>
ORAL
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Presenters
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Philip Hofmann
Aarhus University
Authors
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Philip Hofmann
Aarhus University
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Davide Curcio
Aarhus University
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Alla Chikina
Paul Scherrer Institut, Aarhus University
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Charlotte E Sanders
Rutherford Appleton Lab
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Marco Bianchi
Aarhus University
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Henriette E Lund
Aarhus University
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Veronica Granata
CNR-SPIN Salerno University
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Marco Cannavacciuolo
CNR-SPIN Salerno University
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Pavel Dudin
Synchrotron SOLEIL
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Jose Avila
Synchrotron SOLEIL
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Craig Polley
MAXIV laboratory, Lund University, Sweden, MAX IV Laboratory, Lund University, MAX IV Laboratory
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Balasubramanian Thiagarajan
MAXIV Laboratory, Lund University, Sweden, MAX IV Laboratory, Lund University, MAX IV Laboratory
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Giuseppe Cuono
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland, Polish Academy of Sciences
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Filomena Forte
CNR-SPIN Salerno University
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Mario Cuoco
CNR-SPIN Salerno University
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Carmine Autieri
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland, International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland, Polish Academy of Sciences, International Research Centre MagTop
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Antonio Vecchione
CNR-SPIN Salerno University
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Electronic correlation in single crystals of bi-intercalated vanadium pentoxide
ORAL
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Presenters
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Nicholas C Jerla
State Univ of NY - Buffalo
Authors
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Nicholas C Jerla
State Univ of NY - Buffalo
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George Agbeworvi
Texas A&M University
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Sarbajit Banerjee
Texas A&M University
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Sambandamurthy Ganapathy
State Univ of NY - Buffalo
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Controllable oscillations driven by resistive switching transitions in single crystals of vanadium oxide bronzes
ORAL
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Presenters
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Nitin Kumar
University at buffalo
Authors
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Nitin Kumar
University at buffalo
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Nicholas C Jerla
State Univ of NY - Buffalo
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George Agbeworvi
Texas A&M University
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Sarbajit Banerjee
Texas A&M University
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Sambandamurthy Ganapathy
State Univ of NY - Buffalo
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Glassy electrons at the first order Mott metal-insulator transition
ORAL
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Publication: Glassy electrons at the first order Mott metal-insulator transition (under review, Phys. Rev. Lett.)
Presenters
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SHREYA KUMBHAKAR
Indian Institute of Science Bangalore, Indian Institute of Science, IISc, Bangalore
Authors
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Saurav Islam
Pennsylvania State University
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SHREYA KUMBHAKAR
Indian Institute of Science Bangalore, Indian Institute of Science, IISc, Bangalore
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Zhiqiang Mao
Pennsylvania State University
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Yu Wang
Pennsylvania State University
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Arindam Ghosh
Indian Institute of Science Bangalore, IISc, Bangalore, Indian Institute of Science, Bangalore, Indian Institute of Science
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Atomic-scale imaging of insulator to metal transition in Ru-doped Sr2IrO4
ORAL
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Presenters
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Hong Li
Boston College
Authors
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Hong Li
Boston College
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Zachary Porter
University of California, Santa Barbara
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Ziqiang Wang
Boston College
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Stephen D Wilson
Materials Department, University of California Santa Barbara, University of California, Santa Barbara, UCSB
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Ilija Zeljkovic
Boston College
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Reversible control of MIT in VO<sub>2</sub> heterostructure using electric double layer transistor
ORAL
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Presenters
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Smruti Rekha R Mahapatra
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, IISc, Bangalore
Authors
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Smruti Rekha R Mahapatra
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, IISc, Bangalore
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Debasish Mondal
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, Indian Institute of Science, Bangalore
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Naga Phani B Aetukuri
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, Indian Institute of Science, Bangalore
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Pure electronic control of metal-insulator transition in VO<sub>2</sub>
ORAL
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Presenters
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Debasish Mondal
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, Indian Institute of Science, Bangalore
Authors
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Debasish Mondal
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, Indian Institute of Science, Bangalore
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Smruti Rekha R Mahapatra
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, IISc, Bangalore
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Abigail M Derrico
Department of Physics, Temple University, 1925 N. 12th St., Philadelphia, PA, 19122, USA
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Jay R Paudel
Department of Physics, Temple University, 1925 N. 12th St., Philadelphia, PA, 19122, USA
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Rajeev K Rai
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
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Christoph Schlueter
Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
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Pavan Nukala
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
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Alexander X Gray
Temple University, Department of Physics, Temple University, 1925 N. 12th St., Philadelphia, PA, 19122, USA
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Naga Phani B Aetukuri
Solid State and Structural Chemistry Unit, Indian Institute of Science Bengaluru, Karnataka 560012, India, Indian Institute of Science, Bangalore
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Epitaxial strain engineering of a high-entropy oxide
ORAL
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Presenters
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RANJAN K PATEL
Indian Institute of Science Bangalore
Authors
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RANJAN K PATEL
Indian Institute of Science Bangalore
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Investigating the Insulator to Metal transition in Hole Doped NdNiO<sub>3</sub> using Time-Domain THz Spectroscopy
ORAL
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Presenters
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Sahaj Patel
University of Illinois Urbana Champaign
Authors
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Sahaj Patel
University of Illinois Urbana Champaign
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Yinchuan Lv
University of Illinois at Urbana-Champaign, University of Illinois Urbana Champaign
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RANJAN K PATEL
Indian Institute of Science Bangalore
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Nandana Bhattacharya
Indian Institute of Science Bangalore
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Ameya Patwardhan
University of Illinois Urbana Champaign
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Srimanta Middey
Indian Institute of Science Bangalore
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Fahad Mahmood
UIUC, University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign, University of Illinois Urbana Champaign, University of Illinois
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Critical behavior of the specific heat in Ti-Si amorphous alloys at the metal-insulator transition: possible observation of many body localization
ORAL
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Publication: A. Rogachev, H. Ikuta, U. Mizutani, Hall coefficient in amorphous alloys: critical behavior and quantitative test of quantum corrections due to weak localization and electron-electron interactions, arXiv:2203.03029<br>A. Rogachev, H. Ikuta, U. Mizutani, Critical behavior of the specific heat in Ti-Si amorphous alloys at the metal-insulator transition, arXiv:2203.01783<br>
Presenters
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Andrey Rogachev
University of Utah, Department of Physics and Astronomy, University of Utah
Authors
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Andrey Rogachev
University of Utah, Department of Physics and Astronomy, University of Utah
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Electronic structure changes in Ca<sub>2</sub>RuO<sub>4</sub> under DC current as observed with angle-resolved photoemission
ORAL
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Presenters
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Cissy Suen
Max Planck Institute for Solid State Research
Authors
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Cissy Suen
Max Planck Institute for Solid State Research
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Igor Markovic
University of British Columbia
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Marta Zonno
University of British Columbia, Canadian Light Source
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Sergey Zhadanovich
University of British Columbia
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Sergey Gorovikov
Canadian Light Source, Canadian Lightsource
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Aaron Bostwick
Lawrence Berkeley National Laboratory, LBNL, The Advanced Light Source, lawrence berkeley national lab, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America, Advanced Light Source, Lawrence Berkeley National Lab
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Eli Rotenberg
Lawrence Berkeley National Laboratory, Advanced Light Source, Lawrence Berkeley National Lab
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Bernhard Keimer
Max Planck Institute for Solid State Physics, Max Planck Institute for Solid State Research, Max-Planck-Institute for Solid State Research
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Andrea Damascelli
University of British Columbia, Department of Physics and Astronomy, University of British Columbia
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Christopher Jozwiak
Lawrence Berkeley National Laboratory, LBNL, The Advanced Light Source, lawrence berkeley national lab, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America, Advanced Light Source, Lawrence Berkeley National Lab
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Maxmilian Krautloher
Max Planck Institute for Solid State Research
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Ionic Liquid Gating Induced Resistance Modulation of LaNiO<sub>3</sub> Thin Films
ORAL
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Presenters
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Richmond Wang
University of Maryland, College Park
Authors
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Richmond Wang
University of Maryland, College Park
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Jihun Park
University of Maryland, College Park
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Suraj Maurya
University of Maryland College Park
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Rohit Pant
University of Maryland, 1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland, University of Maryland College Park, University of Maryland, College Park
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You Zhou
University of Maryland, College Park, University of Maryland College Park
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Ichiro Takeuchi
University of Maryland, College Park, 1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland
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Tuning the electronic ground state of perovskite nickelates with dynamic electrochemical doping
ORAL
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Presenters
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Alan Zhang
Sandia National Laboratories
Authors
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Alan Zhang
Sandia National Laboratories
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Catalin D Spataru
Sandia National Laboratories
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A. Alec J Talin
Sandia National Laboratories, CA, Sandia National Laboratories
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A. Alec J Talin
Sandia National Laboratories, CA, Sandia National Laboratories
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