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Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

ORAL

Abstract

Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of a quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Our numerical simulations yield an on/off ratio of over two orders of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system.

Presenters

  • Nicholas Materise

    Department of Physics, Colorado School of Mines

Authors

  • Nicholas Materise

    Department of Physics, Colorado School of Mines

  • Matthieu Dartiailh

    New York Univ NYU, Center for Quantum Phenomena, Department of Physics, New York University, NYU, Center for Quantum Phenemena, Department of Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University, New York, New York

  • Javad Shabani

    New York Univ NYU, Center for Quantum Phenomena, Department of Physics, New York University, NYU, Center for Quantum Phenemena, Department of Physics, New York University, New York University, Center for Quantum Phenomena, Department of Physics, New York University, New York, New York

  • Eliot Kapit

    Physics, Colorado School of Mines, Colorado School of Mines, Department of Physics, Colorado School of Mines