Electronic properties of the Ga<sub>2</sub>O<sub>3</sub>-Fe<sub>2</sub>O<sub>3</sub> system
ORAL
Abstract
Fe2O3 has attracted a lot of interest due to its interesting electronic, chemical and magnetic properties, with applications in photoelectrochemical cells, gas sensor, and Li ion batteries. It is readily available as one of the most abundant material found on earth. On the other hand Ga2O3 is a wide-band-gap semiconductor promising for high power electronic devices and UV blind photodetectors. Here we present results for the electronic structure of Fe2O3 and Ga2O3 in both monoclinic and corundum phases using different exchange correlation functionals. We show how the valence and conduction band edges change with respect to the vacuum level depending upon the choice of functional used for Fe2O3 and Ga2O3. We discuss their band alignments, and the electronic structure and stability of the Ga2O3-Fe2O3 alloys. Finally, we discuss the possibility of forming a p-n heterojunction with p-Fe2O3 and n-Ga2O3 and its characteristics.
–
Presenters
-
Shoaib Khalid
Department of Physics and Astronomy, University of Delaware
Authors
-
Shoaib Khalid
Department of Physics and Astronomy, University of Delaware
-
Fernando Sabino
Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware
-
Anderson Janotti
Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware