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Defects in Gallium Oxide and Nitride

FOCUS · G63 · ID: 354965






Presentations

  • Defect Spectroscopy of Ga2O3

    Invited

    Presenters

    • Steven Ringel

      Ohio State Univ - Columbus

    Authors

    • Steven Ringel

      Ohio State Univ - Columbus

    • Aaron Arehart

      Ohio State Univ - Columbus

    • Hemant Ghadi

      Ohio State Univ - Columbus

    • Joseph McGlone

      Ohio State Univ - Columbus

    • Esmat Farzana

      Ohio State Univ - Columbus

    • James S Speck

      University of California, Santa Barbara

    • Akhil Mauze

      University of California, Santa Barbara

    • Siddharth Rajan

      Ohio State Univ - Columbus

    • Nidhin Kalarickal

      Ohio State Univ - Columbus

    • Zhanbo Xia

      Ohio State Univ - Columbus

    View abstract →

  • Electronic properties of the Ga<sub>2</sub>O<sub>3</sub>-Fe<sub>2</sub>O<sub>3</sub> system

    ORAL

    Presenters

    • Shoaib Khalid

      Department of Physics and Astronomy, University of Delaware

    Authors

    • Shoaib Khalid

      Department of Physics and Astronomy, University of Delaware

    • Fernando Sabino

      Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware

    • Anderson Janotti

      Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware

    View abstract →

  • Unusual Formation of Point Defects and Their Complexes in Ultra-wide Band Gap Beta-Ga2O3

    ORAL

    Presenters

    • Jinwoo Hwang

      Ohio State Univ - Columbus, Center for Electron Microscopy and Analysis, The Ohio State University, The Ohio State University

    Authors

    • Jared Johnson

      Ohio State Univ - Columbus

    • Zhen Chen

      Applied and Engineering Physics, Cornell University, Cornell University, School of Applied and Engineering Physics, Cornell University

    • Joel Varley

      Lawrence Livermore Natl Lab, Lawrence Livermore National Laboratory

    • Christine Jackson

      Ohio State Univ - Columbus

    • Esmat Farzana

      Ohio State Univ - Columbus

    • Aaron Arehart

      Ohio State Univ - Columbus

    • Hsien-Lien Huang

      Ohio State Univ - Columbus

    • Steven Ringel

      Ohio State Univ - Columbus

    • Chris Van de Walle

      University of California, Santa Barbara

    • David Muller

      Cornell University, School of Applied and Engineering Physics, Cornell University, Applied and Engineering Physics, Cornell University

    • Jinwoo Hwang

      Ohio State Univ - Columbus, Center for Electron Microscopy and Analysis, The Ohio State University, The Ohio State University

    View abstract →

  • Donor and acceptor properties in Ga<sub>2</sub>O<sub>3</sub> polymorphs

    ORAL

    Presenters

    • John Lyons

      Center for Computational Materials Science, United States Naval Research Laboratory, Center for Computational Materials Science, US Naval Research Laboratory

    Authors

    • John Lyons

      Center for Computational Materials Science, United States Naval Research Laboratory, Center for Computational Materials Science, US Naval Research Laboratory

    • Darshana Wickramaratne

      United States Naval Research Laboratory, Center for Computational Materials Science, United States Naval Research Laboratory

    • Joel Varley

      Lawrence Livermore Natl Lab, Lawrence Livermore National Laboratory

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  • Optical Properties of Acceptor Impurities in Ga<sub>2</sub>O<sub>3</sub>

    ORAL

    Presenters

    • Intuon Chatratin

      Department of Materials Science & Engineering, University of Delaware

    Authors

    • Intuon Chatratin

      Department of Materials Science & Engineering, University of Delaware

    • Fernando Sabino

      Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware

    • Pakpoom Reunchan

      Department of Physics, Kasetsart University

    • Anderson Janotti

      Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware

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  • Bismuth-alloyed Ga<sub>2</sub>O<sub>3</sub> as a novel p-type transparent conducting oxide

    ORAL

    Presenters

    • Xuefen Cai

      University of Delaware

    Authors

    • Xuefen Cai

      University of Delaware

    • Fernando P. Sabino

      University of Delaware

    • Anderson Janotti

      Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware

    • Suhuai Wei

      Beijing Computational Science Research Center, Beijing Computational Science Res Ctr

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  • Direct Imaging on Strain Relaxation of MBE-grown Single Phase alpha-(Al,Ga)<sub>2</sub>O<sub>3</sub> on m-sapphire Substrate in Atomic Resolution Using Scanning Transmission Electron Microscopy

    ORAL

    Presenters

    • Celesta Chang

      Cornell University, Department of Physics, Cornell University

    Authors

    • Celesta Chang

      Cornell University, Department of Physics, Cornell University

    • Riena Jinno

      Electrical and Computer Engineering, Cornell University

    • Debdeep Jena

      School of Electrical and Computer Engineering, Cornell University, Cornell University, Electrical and Computer Engineering, Cornell University

    • Huili Grace Xing

      Cornell University, Electrical and Computer Engineering, Cornell University

    • David Anthony Muller

      Cornell University, School of Applied and Engineering Physics, Cornell University, Applied and Engineering Physics, Cornell University, School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

    View abstract →

  • X-ray diffraction studies of GaN p-i-n structures for high power electronics

    ORAL

    Presenters

    • Alexandra Zimmerman

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    Authors

    • Alexandra Zimmerman

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Jiaheng He

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • GuanJie Cheng

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Davide Del Gaudio

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Jordan Occena

      Materials Science and Engineering, University of Michigan

    • Fabian Naab

      Michigan Ion Beam Laboratory, University of Michigan

    • Mohsen Nami

      Department of Electrical Engineering, Yale University

    • Bingjun Li

      Department of Electrical Engineering, Yale University

    • Jung Han

      Department of Electrical Engineering, Yale University

    • Rachel Goldman

      Univ of Michigan - Ann Arbor, Physics and Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan, Materials Science Engineering, University of Michigan

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  • Influence of interfacial defects on the electronic states at GaN p-i-n diode interfaces

    ORAL

    Presenters

    • GuanJie Cheng

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    Authors

    • GuanJie Cheng

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Jiaheng He

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Alexandra Zimmerman

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Davide Del Gaudio

      Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

    • Fabian Naab

      Michigan Ion Beam Laboratory, University of Michigan

    • Mohsen Nami

      Department of Electrical Engineering, Yale University

    • Bingjun Li

      Department of Electrical Engineering, Yale University

    • Jung Han

      Department of Electrical Engineering, Yale University

    • Rachel Goldman

      Univ of Michigan - Ann Arbor, Physics and Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan, Materials Science Engineering, University of Michigan

    View abstract →