Defects in Gallium Oxide and Nitride
FOCUS · G63 · ID: 354965
Presentations
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Defect Spectroscopy of Ga2O3
Invited
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Presenters
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Steven Ringel
Ohio State Univ - Columbus
Authors
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Steven Ringel
Ohio State Univ - Columbus
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Aaron Arehart
Ohio State Univ - Columbus
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Hemant Ghadi
Ohio State Univ - Columbus
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Joseph McGlone
Ohio State Univ - Columbus
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Esmat Farzana
Ohio State Univ - Columbus
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James S Speck
University of California, Santa Barbara
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Akhil Mauze
University of California, Santa Barbara
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Siddharth Rajan
Ohio State Univ - Columbus
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Nidhin Kalarickal
Ohio State Univ - Columbus
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Zhanbo Xia
Ohio State Univ - Columbus
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Ab initio studies on segregation of n-type dopants and vacancies near beta-Ga2O3(010) surface
ORAL
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Presenters
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Jingyang Wang
Materials Science and Engineering, Stanford University
Authors
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Jingyang Wang
Materials Science and Engineering, Stanford University
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Paulette Clancy
Chemical and Biomolecular Engineering, Johns Hopkins University
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Electronic properties of the Ga<sub>2</sub>O<sub>3</sub>-Fe<sub>2</sub>O<sub>3</sub> system
ORAL
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Presenters
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Shoaib Khalid
Department of Physics and Astronomy, University of Delaware
Authors
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Shoaib Khalid
Department of Physics and Astronomy, University of Delaware
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Fernando Sabino
Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware
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Anderson Janotti
Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware
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Unusual Formation of Point Defects and Their Complexes in Ultra-wide Band Gap Beta-Ga2O3
ORAL
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Presenters
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Jinwoo Hwang
Ohio State Univ - Columbus, Center for Electron Microscopy and Analysis, The Ohio State University, The Ohio State University
Authors
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Jared Johnson
Ohio State Univ - Columbus
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Zhen Chen
Applied and Engineering Physics, Cornell University, Cornell University, School of Applied and Engineering Physics, Cornell University
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Joel Varley
Lawrence Livermore Natl Lab, Lawrence Livermore National Laboratory
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Christine Jackson
Ohio State Univ - Columbus
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Esmat Farzana
Ohio State Univ - Columbus
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Aaron Arehart
Ohio State Univ - Columbus
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Hsien-Lien Huang
Ohio State Univ - Columbus
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Steven Ringel
Ohio State Univ - Columbus
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Chris Van de Walle
University of California, Santa Barbara
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David Muller
Cornell University, School of Applied and Engineering Physics, Cornell University, Applied and Engineering Physics, Cornell University
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Jinwoo Hwang
Ohio State Univ - Columbus, Center for Electron Microscopy and Analysis, The Ohio State University, The Ohio State University
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Donor and acceptor properties in Ga<sub>2</sub>O<sub>3</sub> polymorphs
ORAL
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Presenters
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John Lyons
Center for Computational Materials Science, United States Naval Research Laboratory, Center for Computational Materials Science, US Naval Research Laboratory
Authors
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John Lyons
Center for Computational Materials Science, United States Naval Research Laboratory, Center for Computational Materials Science, US Naval Research Laboratory
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Darshana Wickramaratne
United States Naval Research Laboratory, Center for Computational Materials Science, United States Naval Research Laboratory
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Joel Varley
Lawrence Livermore Natl Lab, Lawrence Livermore National Laboratory
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Optical Properties of Acceptor Impurities in Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Intuon Chatratin
Department of Materials Science & Engineering, University of Delaware
Authors
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Intuon Chatratin
Department of Materials Science & Engineering, University of Delaware
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Fernando Sabino
Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware
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Pakpoom Reunchan
Department of Physics, Kasetsart University
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Anderson Janotti
Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware
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Transition levels for impurities in β-Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Suman Bhandari
Univ of Alabama - Birmingham
Authors
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Suman Bhandari
Univ of Alabama - Birmingham
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Mary Zvanut
Univ of Alabama - Birmingham
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Bismuth-alloyed Ga<sub>2</sub>O<sub>3</sub> as a novel p-type transparent conducting oxide
ORAL
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Presenters
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Xuefen Cai
University of Delaware
Authors
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Xuefen Cai
University of Delaware
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Fernando P. Sabino
University of Delaware
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Anderson Janotti
Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Material Science and Engineering, University of Delaware, Univ of Delaware
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Suhuai Wei
Beijing Computational Science Research Center, Beijing Computational Science Res Ctr
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Direct Imaging on Strain Relaxation of MBE-grown Single Phase alpha-(Al,Ga)<sub>2</sub>O<sub>3</sub> on m-sapphire Substrate in Atomic Resolution Using Scanning Transmission Electron Microscopy
ORAL
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Presenters
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Celesta Chang
Cornell University, Department of Physics, Cornell University
Authors
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Celesta Chang
Cornell University, Department of Physics, Cornell University
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Riena Jinno
Electrical and Computer Engineering, Cornell University
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Debdeep Jena
School of Electrical and Computer Engineering, Cornell University, Cornell University, Electrical and Computer Engineering, Cornell University
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Huili Grace Xing
Cornell University, Electrical and Computer Engineering, Cornell University
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David Anthony Muller
Cornell University, School of Applied and Engineering Physics, Cornell University, Applied and Engineering Physics, Cornell University, School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
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Ultrafast Optical Measurement of Defect Dynamics in β-Ga<sub>2</sub>O<sub>3 </sub>using Supercontinuum Pump-Probe Spectroscopy.
ORAL
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Presenters
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Arjan Singh
Cornell University
Authors
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Arjan Singh
Cornell University
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Okan Koksal
Cornell University
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Nicholas Tanen
Cornell University
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Debdeep Jena
Cornell University
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Huili Xing
Cornell University
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Farhan Rana
Cornell University
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X-ray diffraction studies of GaN p-i-n structures for high power electronics
ORAL
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Presenters
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Alexandra Zimmerman
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
Authors
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Alexandra Zimmerman
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Jiaheng He
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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GuanJie Cheng
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Davide Del Gaudio
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Jordan Occena
Materials Science and Engineering, University of Michigan
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Fabian Naab
Michigan Ion Beam Laboratory, University of Michigan
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Mohsen Nami
Department of Electrical Engineering, Yale University
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Bingjun Li
Department of Electrical Engineering, Yale University
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Jung Han
Department of Electrical Engineering, Yale University
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Rachel Goldman
Univ of Michigan - Ann Arbor, Physics and Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan, Materials Science Engineering, University of Michigan
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Influence of interfacial defects on the electronic states at GaN p-i-n diode interfaces
ORAL
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Presenters
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GuanJie Cheng
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
Authors
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GuanJie Cheng
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Jiaheng He
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Alexandra Zimmerman
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Davide Del Gaudio
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Fabian Naab
Michigan Ion Beam Laboratory, University of Michigan
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Mohsen Nami
Department of Electrical Engineering, Yale University
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Bingjun Li
Department of Electrical Engineering, Yale University
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Jung Han
Department of Electrical Engineering, Yale University
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Rachel Goldman
Univ of Michigan - Ann Arbor, Physics and Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan, Materials Science Engineering, University of Michigan
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Study of carbon-related point defects in C-doped GaN using photo-induced electron paramagnetic resonance spectroscopy
ORAL
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Presenters
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Subash Paudel
Univ of Alabama - Birmingham
Authors
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Subash Paudel
Univ of Alabama - Birmingham
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Mary Zvanut
Univ of Alabama - Birmingham
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Michal Bockowski
Institute for High Pressure Physics, Police Academy of Sciences
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