APS Logo

Influence of interfacial defects on the electronic states at GaN p-i-n diode interfaces

ORAL

Abstract

Although silicon-based electronics are used for light-emitting diodes and electric vehicles, their utility in high power applications is limited by a low breakdown voltage. A promising alternative is vertical GaN devices, but these require regrown active regions. Here, we report on the influence of regrowth processing steps on interfacial defects and their electronic signatures. A comparison of GaN p-i-n structures prepared with and without ex-situ ambient exposure and/or chemical etching reveals the highest interfacial near-band edge (NBE) and donor-acceptor pair (DAP) cathodoluminescence (CL) emission from the in-situ structures. Interestingly, elastic recoil detection analysis (ERDA) and Rutherford backscattering spectroscopy reveal the lowest interfacial [H] but the highest fraction of displaced Ga atoms, suggesting efficient incorporation of MgGa. On the other hand, for the ex-situ structures, minimal interfacial [H] is observed, and the highest surface NBE and DAP CL emission is apparent. Finally, for the etched/regrown structures, ERDA reveals the highest interfacial [H], and significant yellow CL emission is observed. We will discuss relationships between interfacial [H], the fraction of displaced Ga atoms, CL emission features, and diode performance.

–

Presenters

  • GuanJie Cheng

    Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

Authors

  • GuanJie Cheng

    Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

  • Jiaheng He

    Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

  • Alexandra Zimmerman

    Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

  • Davide Del Gaudio

    Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan

  • Fabian Naab

    Michigan Ion Beam Laboratory, University of Michigan

  • Mohsen Nami

    Department of Electrical Engineering, Yale University

  • Bingjun Li

    Department of Electrical Engineering, Yale University

  • Jung Han

    Department of Electrical Engineering, Yale University

  • Rachel Goldman

    Univ of Michigan - Ann Arbor, Physics and Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan, Materials Science Engineering, University of Michigan