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PIC/MCC simulations of the effects of a radio-frequency bias on inductively coupled plasmas

ORAL

Abstract

Many plasma processing applications require precise RF bias control. In this study a 2D Particle-in-cell/Monte Carlo Collisions model of Inductively coupled plasmas (ICP) with complex electrode geometry and RF bias is validated against experimental measurements performed in a GEC reference cell. The results show that the RF bias nonlinearly reduces the plasma density while shifting the Electron energy probability distribution function (EEPF) to lower energies and transforming the Ion energy and angular distribution function (IEADF) from a single to a double peak structure with a narrow angular distribution. Furthermore, we confirm and explain three experimentally observed ICP-CCP coupling mechanisms[1] that potentially limit independent control of ion flux and energy: Even at high ratios of the inductively (PICP) and capacitively (PCCP) applied powers, Pccp significantly affects the EEPF through sheath heating, demonstrating its nonnegligible influence on plasma density and ion flux; PICP modifies the voltage drop across the sheath at fixed PCCP and, thus, the IEADF, since increasing PICP raises the plasma current, thereby reducing the sheath voltage. PICP alters the frequency and damping characteristics of plasma series resonance (PSR) oscillations of the RF current. The simulation results show good experimental agreement and advance understanding of ICP-CCP coupling.

[1] Schulze J et al. APL. 100, 024102 (2012).

Funded by NSFC (12275095, 11975174, 12011530142) and DFG (428942393).

Publication: submitted manuscripts: Xiandi Li, Zhaoyu Chen, Zili Chen, Yu Wang, Minglun Tian, Hongyu Wang, Zhipeng Chen, Wei Jiang, Julian Schulze, Ya Zhang

Presenters

  • Xiandi Li

    School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China

Authors

  • Xiandi Li

    School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Zhaoyu Chen

    School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Zili Chen

    School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Yu Wang

    School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China, Huazhong University of Science and Technology

  • Xiandi Li

    School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Hongyu Wang

    School of Physics Science and Technology, Anshan Normal University, Anshan, 114007, China

  • Zhipeng Chen

    School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Li Wang

    Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany, Ruhr University Bochum

  • Wei Jiang

    School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China

  • Julian Schulze

    Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

  • Ya Zhang

    Department of Mathematics, Wuhan University of Technology, Wuhan, 430070, China, Wuhan University of Technology, Department of Physics, Wuhan University of Technology, Wuhan, 430070, China