Electron power absorption dynamics in capacitive RF plasmas: from fundamental understanding to process-relevant parameter control

Capacitively Coupled Radio-Frequency Plasmas (CCP) are one of the most frequently used plasma sources in semiconductor manufacturing, particularly in etching and deposition. The fabrication of next-generation semiconductor devices requires precise control over plasma characteristics, including the generation of active species (e.g., electrons, ions, and reactive neutrals) via electron-impact dissociation and ionization of the background gas, as well as their uniformity and flux–energy distribution functions at boundary surfaces, particularly at the wafer. Comprehensive insight into electron power absorption mechanisms is fundamental to enabling such advanced plasma control. In this presentation, the distinct electron power absorption dynamics in electropositive argon plasmas across different reactor geometries and surface materials, as well as in magnetized and unmagnetized electronegative CF₄ plasmas, will be discussed based on Particle-in-Cell/Monte Carlo Collision simulations. Based on this fundamental understanding, control concepts through customizing the reactor geometry, applying tailored driving voltage waveforms, and introducing an external magnetic field for improving the plasma uniformity, charged particle distribution functions, as well as generation rates of radicals are developed and will be introduced.