Profile Simulation for Advanced Semiconductor Fabrication: Challenges and Opportunities from the Etch Perspective

The continued feature miniaturization and aspect ratio increase in advanced logic and memory device fabrication place increasingly stringent requirements on dry processes such as plasma etching. In general, modeling and simulation (M&S) tools are critical for mechanistic understanding to accelerate technological innovations. In particular, profile simulation is highly relevant and interesting, because the ultimate goal of reactor and process design is to enhance the nanoscale control of the feature evolution.



In this talk, we will first examine the key issues in basic plasma etch processes regarding etch rate control and feature profile control. Second, we will review the existing methodologies of profile simulation in terms of fundamental principles as well as pros and cons. Third, we will demonstrate the application of profile simulations with concrete examples. Finally, we will provide the outlook on potential future development directions in profile simulation technologies (physics and chemistry complexity, computational speed, synergy with other M&S modules, etc.) based on existing industrial needs.