Effect of xenon gas on deposition of diamond-like carbon film using high power pulsed magnetron sputtering
ORAL
Abstract
The peak current applying to the carbon target was 70A, the pulse width was 10µs, and the frequency was 400 Hz. The total gas flow rate of Xe/Ar mixture gas was 10sccm at a pressure of 0.5 Pa. Xe gas mixture ratio to Ar gas was varied from 0% to 100%.
ID/IG ratio, which is due to disorder and graphite band, was evaluated by Raman scattering spectroscopy. ID/IG ratio was constant of 1.2 for any Xe gas mixture ratio. The flux and energy of carbon ions decreased with increasing Xe gas mixture ratio. Xe ion with high kinetic energy would contribute to the film density of the DLC because mass of Xe is three times larger than that of Ar.
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Publication: K. Iga et al., Thin Solid Films 672(2019) 104.
Presenters
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Keita Takeda
Department of Electrical and Electronic Engineering, Meijo University, Japan
Authors
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Keita Takeda
Department of Electrical and Electronic Engineering, Meijo University, Japan
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Akinori Oda
Chiba Inst of Tech, Chiba Institute of Technology, Tsudanuma 2-17-1, Narashino 275-0016, Japan., Department of Electrical and Electronic Engineering, Chiba Institute of Technology, Japan, Department of Electrical and Electronic Engineering, Chiba Institute of Technology, Japan., Chiba Institute of Technology
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Hiroyuki Kousaka
Gifu University, Yanagido 1-1, Gifu 501-1193, Japan., Department of Mechanical Engineering, Gifu University, Japan, Department of Mechanical Engineering, Gifu University, Japan., Gifu University
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Takayuki Ohta
Meijo Univ, Meijo University, Shiogamaguchi 1-501, Tenpaku-ku, Nagoya 468-8502, Japan., Department of Electrical and Electronic Engineering, Meijo University, Japan, Department of Electrical and Electronic Engineering, Meijo University, Japan., Meijo university, Meijo University, Department of Electrical and Electronic Engineering, Meijo Universiry, Japan