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Effect of pulse width on deposition of diamond-like carbon on high power pulsed magnetron sputtering

ORAL

Abstract

A diamond-like carbon (DLC) is an amorphous carbon containing both sp2 bond and sp3 bond structures. Ion flux to substrate and ion energy around 100 eV is essential to increase the sp3 bond in the DLC film. An increase in the ion flux is expected by using high power pulsed magnetron sputtering (HPPMS) due to large plasma density. In this study, the effect of pulse width on deposition of DLC film on HPPMS under constant peak power density or constant average power density. The relationship between behavior of ion measured by energy-resolved mass spectrometry and film quality of DLC film was investigated.

The frequency of applied pulse to the carbon target was 400 Hz and no substrate bias voltage was applied. The gas flow rate of Ar was 5 sccm and the pressure was 0.5 Pa. The distance between the target and the orifice was 80 mm.

ID/IG ratio, evaluated by Raman scattering spectroscopy, decreased from 1.13 to 0.80 with decreasing the pulse width from 50 to 20 µs under the applied average power density of 1.97W/cm2. On the other hand, ID/IG ratio was constant for any pulse width under constant peak power density of 1.5kW/cm2. These results indicate that the peak power density is essential to characterize the film density of the DLC in comparison with average power density.

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Publication: K. Iga et al., Thin Solid Films 672(2019) 104.

Presenters

  • Takayuki Ohta

    Meijo Univ, Meijo University, Shiogamaguchi 1-501, Tenpaku-ku, Nagoya 468-8502, Japan., Department of Electrical and Electronic Engineering, Meijo University, Japan, Department of Electrical and Electronic Engineering, Meijo University, Japan., Meijo university, Meijo University, Department of Electrical and Electronic Engineering, Meijo Universiry, Japan

Authors

  • Takayuki Ohta

    Meijo Univ, Meijo University, Shiogamaguchi 1-501, Tenpaku-ku, Nagoya 468-8502, Japan., Department of Electrical and Electronic Engineering, Meijo University, Japan, Department of Electrical and Electronic Engineering, Meijo University, Japan., Meijo university, Meijo University, Department of Electrical and Electronic Engineering, Meijo Universiry, Japan

  • Jo Matsushima

    Meijo university

  • Sota Okumura

    Meijo University, Shiogamaguchi 1-501, Tenpaku-ku, Nagoya 468-8502, Japan., Meijo university

  • Akinori Oda

    Chiba Inst of Tech, Chiba Institute of Technology, Tsudanuma 2-17-1, Narashino 275-0016, Japan., Department of Electrical and Electronic Engineering, Chiba Institute of Technology, Japan, Department of Electrical and Electronic Engineering, Chiba Institute of Technology, Japan., Chiba Institute of Technology

  • Hiroyuki Kousaka

    Gifu University, Yanagido 1-1, Gifu 501-1193, Japan., Department of Mechanical Engineering, Gifu University, Japan, Department of Mechanical Engineering, Gifu University, Japan., Gifu University