Preparation and characterization of few-layer ReS₂

Atomically thin transition metal dichalcogenides (TMDs) have been actively investigated due to unique electronic properties that are distinct from their bulk counterparts. The case of ReS2 is of particular interest because of the in-plane anisotropy and layer-independent direct band gap, which distinguishes it from many other TMDs. This allows for rich research landscape to explore its electronic structure and interactions with light. We have characterized the ReS2 on hexagonal boron nitride (hBN) by atomic-force microscopy. We plan to visualize the electronic properties of the sample by microwave impedance microscopy. Our work represents a novel method to study the electronic structure of TMDs.