Selectively Grown Silicon Nano-Wires for Transistor Devices

The goal of this project is to fabricate a transistor device using silicon nano-wires (SiNW) as semiconductors. In order to be able to establish electrical conduct with the nano-wires the SiNW growth is confined to certain areas that can be contacted using electron-beam lithography (EBL). This is done by controlling the catalyst deposition through angle-evaporation onto pillars on the device. The nanowires then grow from the sidewalls of the pillars and can be contacted using EBL.