The Current State of Semiconducting Silicide Research

Silicon is still the material of choice for most microelectronic applications although it is not the ideal choice for many optoelectronic applications. The twelve semiconducting silicides may bridge this gap. Fundamental energy gaps of the known semiconducting silicides range from 0.07-0.12 eV (hexagonal MoSi$_{2}$ and WSi$_{2}$, ReSi$_{2}$) to 2.3 eV (Os$_{2}$Si$_{3}$). With further development, they may provide a background for energy-gap engineering similar to that achieved with III-V compounds in their superlattices. The authors will discuss the current state of semiconducting silicides including our own investigation into the growth and characterization of $\beta$-FeSi$_{2}$, $\beta$-Fe(SiGe)$_{2}$, OsSi$_{2}$, and Os$_{2}$Si$_{3}$.