Study of Calcination of GaOOH to Generate β-Ga₂O₃ Along with Adjusting Defect Concentration Using Hydrogen Remote Plasma.

β-Ga₂O₃ is a wide band gap semiconductor/insulator that has great properties for high power devices and solar-blind ultraviolet photodetectors. Specifically for high power devices, being able to have a PN junction of the same lattice and chemical structure on either side increases efficiency of the electronics and usually is preferred. However, β-Ga₂O₃ is typically only found to be n-type and is really difficult to make p-type. Literature dictates this is due to its usual high amounts of gallium vacancies. To challenge this, we are creating β-Ga₂O₃ with differing types of surface defects and studying morphologies, surface defects, and getting a general characterization of the material via x-ray diffraction spectroscopy, scanning electron microscopy, energy disserve x-ray spectroscopy, and Raman spectroscopy. We are also testing commercial powder and subjecting it to hydrogen remote plasma to alter the defects within the material, specifically attempting to fill these gallium vacancies. We study defect information and general characterization between hydrogenated and original β-Ga₂O₃ powder through thermoluminescence, optical absorption, and inductively coupled plasma to determine defect information and compositional analysis.