Spin control with electric fields in double quantum dots: tunneling effect

It is a notion that single electron spin in III-V semiconductor quantum dots can be manipulated in a desired fashion with the application of electric fields, magnetic fields, and lateral size of the quantum dots. In this talk, we model two different lateral sizes of the quantum dots and investigate the tunneling of electron spin within the dots. We investigate the change in behavior of electron g-factor and decoherences within the dot with electric and magnetic fields. The interplay between the Rashba and Dresselhaus spin-orbit couplings can provide additional information on spin manipulation in these dots. In this presentation, we provide analytical and numerical results, that show the evidence of tunneling of spins in the dots as well as influence in the g-factor and decoherence of the spins in the dots. The results open new possibilities for the design of qubits that may have applications in quantum computing and information processing.