The effect of strain on the thermal management of 2D InSe transistors using the Monte Carlo simulation of Phonon Boltzman equation

Strain engineering is an effective approach to improve the thermal properties of two-dimensional materials for more efficient usage in micro/nano electronics. The two-dimensional InSe which shows a high capacity for deformation and can withstand significant stretching without breaking, is a good case of study. Here, we have studied transient heat transfer mechanisms in InSe and the InSe under 4% strain using non-equilibrium Monte Carlo simulation of the Phonon-Boltzmann equation. This study presents the effect of strain on finding the optimal replacements for the silicon channels in MOSFET. The two materials are heated for 200 ps and then are cooled for the next 200 ps. The simulated instruments are heated according to the Joule heating mechanism. The hotspots were formed shortly after the start of the simulation. We have investigated the peak temperature in two monolayers. Both materials reached high maximum temperatures in response to the self-heating zone. It is obtained that the strained InSe has a lower peak temperature than that of the unstrained InSe. In other words, the Indium selenide with 4% strain showed a cooler channel during the heating phase. On the other hand, in the cooling phase, indium selenide cooled faster under strain and reached a lower steady state temperature. In conclusion, the strain by lowering the maximum temperature in indium selenide can make it a more efficient candidate for the MOSFET channels.