Poster: Electric field modulated layer-dependent magnetism in Janus ferromagnetic CrSTe.

Switching magnetic orientation in specific layer of material is important for spin-based device applications. In convention, magnetic effect is applied for such magnetic flipping. However, such techniques are associated with high power. Hence, an alternate, low-power consuming mechanism for magnetization reversal is important from the perspective of spintronic applications. In this work, we show an electric field-induced layer-specific spin flipping in Janus CrSTe. Particularly, in tri-layer CrSTe, the magnetic atom at central layers remains unaffected under electric perturbation. However, the magnetic atoms of surface layers are affected by electric perturbation. Remarkably, magnetic elements of only one surface layer change their magnetic orientation, while the magnetic orientation of the other surface layer remains unaltered. This observation is intriguing because the magnetic orientation of the unaltered layer remains unaffected even after changing the electric bias. The reason for this asymmetric response of CrSTe to electric field is rooted in the asymmetric Janus structure of CrSTe. Due to different electronegativity of the S and Te atoms, different charge redistribution occurs in these atoms under electric field. These varying charge redistributions shield the electric field asymetrically which leads to asymmetric magnetic response. This technique of layer-specific confined magnetization switching in Janus materials is promising for advanced compact spintronic devices.