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Improving the understanding of moiré spatial structure and electronic transport properties

ORAL

Abstract

Over the last half decade, electrical transport studies of Van der Waals moiré superlattices have revealed rich correlated and topological phenomena. However, the actual spatial structure of the superlattice which give rise to the electronic properties are still not well understood as electrical transport averages over local inhomogeneities between contact pairs. Scanning probe techniques are popular, nondestructive ways to directly visualize the real space structure of moirés. In this talk I will describe progress in using the recently developed torsional force microscopy, an atomic force microscope (AFM) based technique, to provide complimentary spatial structure information to electrical transport. I will highlight challenges in extracting quantitative structural information from AFM images and describe a protocol which overcomes these challenges to get accurate determination of local twist angle and strain. If time permits, I will show preliminary results of electrical transport through regions of a twisted bilayer graphene superlattice with pre-characterized spatial structure.

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Presenters

  • Steven Tran

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

Authors

  • Steven Tran

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Jan-Lucas Uslu

    JARA-FIT and 2nd Institute of Physics, RWTH Aachen University

  • Mihir Pendharkar

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Chaitrali Duse

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Qingrui Cao

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Aaron L Sharpe

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Joe Finney

    Stanford University, Stanford Univ

  • Marisa Hocking

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Nathan J Bittner

    Independent Researcher

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Marc Kastner

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Andrew J Mannix

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • David Goldhaber-Gordon

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University, Department of Physics, Stanford University