Bulk spectroscopy of telecom atomic defects in silicon

Quantum defects in silicon, particularly those with telecom spin-photon interfaces, have emerged as promising candidates for the development of quantum repeater devices and the implementation of large-scale quantum networks via optical fibers. The creation of the desired defects, while suppressing unwanted ones, necessitates a delicate balance between different impurity concentrations and the optimization of thermal treatment. This process requires efficient spectroscopic screening of samples generated through various protocols. In this study, we develop a cryogenic bulk photoluminescence (PL) spectroscopy setup to investigate novel quantum defects in silicon. We first characterize the telecom O-band optical emission of T centers in silicon and silicon-on-insulator samples using PL spectroscopy. This characterization provides rapid feedback for enhancing the yield of T center generation by optimizing the carbon and hydrogen ion implantation dosages, as well as thermal annealing conditions. Additionally, we elucidate the impact of laser-induced local heating on their inhomogeneous emission linewidth. Beyond T centers, we will also present our progress in the search for novel atomic defects in silicon with advantageous properties for quantum networking applications.