Towards scalable quantum networks based on V2 centers in silicon carbide

Point defects in 4H-silicon carbide (SiC) are an interesting candidate for scalable quantum applications, thanks to their outstanding spin-optical properties [1,2] and the prospects of nanophotonic integration [3,4]. In this talk, I will present our latest progress towards optically coherent integrated SiC devices based on V2 centers. In particular, I will show our recent results on defect optical coherence and spectral stability in commercially available bulk-grown material, where we measure near-lifetime-limited lines (~35 MHz) using check-probe spectroscopy [5]. Next, I will touch upon our nanofabrication and defect generation efforts within the silicon-carbide-on-insulator platform [4]. Combined, these results sketch a path towards using V2 centers as building block for future quantum networks.



[1] Nagy, R. et al. Nature Communications. 10.1, 1-8 (2019).

[2] Widmann, M. et al. Nature Materials. 14, 164–168 (2015).

[3] Babin, C, et al. Nature Materials. 21, 67–73 (2022).

[4] Lukin, D.M. et al. Nature Photonics. 14, 330–334 (2020).

[5] van de Stolpe, G.L. et al. arXiv preprint.2409.13018 (2024)