Customizable spin qubit devices fabricated in an industrial R&D line

Gate-defined semiconductor spin qubits have utility both in fundamental quantum research and as foundational components of quantum computation. However, the optimal device design may vary widely among the multitude of use cases, for example in gate dimension, pitch, arrangement, routing, readout mechanism, or control modality. The ability to straightforwardly alter device designs will enable new physics explorations as well as provide a discovery path towards the ideal gated spin qubit. The SLEDGE (single layer etch-defined gate electrode) device platform [1], in which gates are contacted with a CMOS-like interconnect process, facilitates such rapid gate-level modifications while being adaptable to a given control scheme and semiconductor stack. The platform has enabled multiple explorations of spin qubit possibilities with academic partners. Here, we detail the flexibility, reproducibility, and performance [2] of devices fabricated with the SLEDGE process, and we discuss recent advances in design variations [3], extension to two-dimensional gate arrangements, and collaborations through the Qubits for Computing Foundry program.

[1] Ha et al., Nano Lett. 22, 3, 1443 (2022)

[2] Weinstein et al., Nature 615, 817 (2023)

[3] Acuna et al., arXiv:2406.03705 (2024)