A Semi-classical Floquet-NEGF Method to Model Opto-electronic Devices
ORAL
Abstract
In recent years, opto-electronic devices have become ubiquitous. The non-equilibrium Green's function formalism (NEGF) is traditionally employed to model opto-electronic devices, since this method allows a rigorous inclusion of intricate electron-photon interactions, based on a quantum electrodynamical description. Typically, the resulting solution scheme consists of self-consistently calculating the involved Green's functions and the self-energy contributions of the included interactions. However, the required iteration loop is computationally expensive, such that the wide-spread application of this method is limited.
We propose a novel modeling scheme based on Floquet-NEGF theory. By using semi-classical arguments, the electron-photon interactions are treated at the Hamiltonian level so that the self-consistent loop is circumvented. Consequently, the advocated method is significantly faster while maintaining accuracy, which permits its application to more intricate structures, as will be demonstrated during the presentation.
We propose a novel modeling scheme based on Floquet-NEGF theory. By using semi-classical arguments, the electron-photon interactions are treated at the Hamiltonian level so that the self-consistent loop is circumvented. Consequently, the advocated method is significantly faster while maintaining accuracy, which permits its application to more intricate structures, as will be demonstrated during the presentation.
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Publication: De Sutter, N., Vanderstraeten, E. & Vande Ginste, D. A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum well devices. J Comput Electron (2024). https://doi.org/10.1007/s10825-024-02203-3
Presenters
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Nathan De Sutter
Ghent University
Authors
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Nathan De Sutter
Ghent University
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Emile Vanderstraeten
Ghent University