Noise spectroscopy study of Zeolitic-imidazolate framework (ZIF-8) based bipolar memristor for non-volatile ReRAM application

Resistive random-access memory (ReRAM) devices are gaining traction as promising candidates for advanced non-volatile memory due to their cost-effectiveness, stability, and ease of fabrication. Among the materials explored for ReRAM, metal-organic frameworks (MOFs) have shown promise due to their structural versatility and chemical tunability. This study focuses on a ReRAM device incorporating a solution-processed thin film of the zeolitic imidazolate framework (ZIF-8) as the resistive switching layer. The ZIF-8 film was synthesized via solution processing and characterized for crystallographic structure and film morphology using X-ray diffraction and field emission scanning electron microscopy. Transport measurements and resistance noise spectroscopy were employed to probe the underlying resistive switching mechanisms. Our results offered critical insights into the presence of multiple stable states in a device, an essential feature for multi-level memory applications. The detailed noise analysis reveals dynamic switching behavior indicating rapid transitions between set and reset states in ZIF-8-based ReRAM.