Finding the dominant parameter for the resistive switching of perovskite oxide resistance random access memory in Pt/Nb:SrTiO<sub>3</sub>
ORAL
Abstract
Perovskite oxide-based ReRAM has gained attention for its potential in memory devices. Among the various structures, Pt/Nb-doped SrTiO3 (Pt/Nb:STO) resistive switching (RS) device, which consists of a Schottky junction formed by a niobium (Nb)-doped wide bandgap oxide SrTiO3 and a high work function metal Pt, is noteworthy for AI device and next generation memory. The RS is thought to be due to the modulation of the Schottky barrier formed at the interface between Pt and Nb:STO. However, the operating parameters, i.e. voltage, current, current density and energy consumption, which have the greatest impact on RS performance remain unclear. [1,2] Moreover, RS mechanism happened overall [3-7] or localized [8-10] at the interface has been debated. Our study showed a strong link between the current density and RS performance. The Pt/Nb:STO exhibits overall operation in the high resistance state and localized operation in the low resistance state (LRS). It is also found that the predominance of local operation changes with the magnitude of LRS: as the applied current density increases, the magnitude of LRS is enhanced and thereby the local operation becomes more pronounced. We suggest this is due to the increase in the current flowing through the locally low barrier area contributing to the tunneling current, strengthening the non-uniformity of the Schottky barrier at the interface [8]. Another possible reason is the sheet resistance formed at the interface [11], and a detailed discussion will be presented on the day.
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