Highly Sensitive Ti₃C₂T_x/MoSe₂ (2-D/Quasi-2-D) Heterojunction-Based Photodetector

Two-dimensional (2D) materials, which can be synthesized using low-temperature methods like liquid exfoliation, are now being considered for electronics and optoelectronics applications due to their unique optoelectronic properties and ability to be processed into various structures. In this article, a 2D material i.e., Ti₃C₂T_x/MoSe₂ with a nanometer-thick Ti₃C₂T_x MXene and MoSe₂ film has been fabricated by a successive interfacial assembly of liquid exfoliated 2D MXene and MoSe₂ over SiO₂ substrate. Photodetectors (PDs) made of Ti₃C₂T_x/MoSe₂ over SiO₂ on Si substrate exhibit significantly improved photodetection ability. The photo responsivity of Ti₃C₂T_x/MoSe₂ PD is ∼ 159 mA/W when illuminated by a 372 nm light intensity of 4.4µW at a reverse bias of -1.5 V. The interface between the 2D and quasi-2D effect on the formation of the heterostructure played a major role in the enhancement of its photodetection performance. Observation of high responsivity ∼ 159 mA/W, as well as external quantum efficiency (53%) for Ti₃C₂T_x/MoSe₂ PD, make it a promising material for a UV light photo switch and image sensors. This work sheds light on the utilization of a combination of 2D MXene and quasi-2D MoSe2 materials in high performance optoelectronic devices.