Studies of Anomalous Hall Effect and Spin–Orbit Torque in Ferromagnetic Semiconductor and Weyl Semimetal Heterostructures
ORAL
Abstract
Interplay of spin–orbit coupling and magnetic interactions in heterostructures holds a great potential for spintronic applications, particularly in the development of energy-efficient magnetic memory and logic devices [1,2]. Spin-orbit torque (SOT) switching devices fabricated by combining van der Waals (vdW) based semiconducting ferromagnets (FMs) and low-symmetry crystal structure spin-source materials, such as WTe2 [1], are appealing for spintronics devices because it allows to exploit magnetic field-free magnetization switching phenomena (through out-of-plane spin polarization) in tandem with electric field-controlled magnetism phenomena (in the FM layer) for modular device functionalities. We will report on our experiments aimed at realizing field-free SOT magnetic switching of thin layers of a semiconducting FM, i.e., Cr₂Ge₂Te₆ (CGT) using multicomponent spin polarization generated in the adjacent spin-source material with a low-symmetry crystal structure.
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Publication: [1]. Kao, IH., Muzzio, R., Zhang, H. et al. Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2. Nat. Mater. 21, 1029–1034 (2022). https://doi.org/10.1038/s41563-022-01275-5 <br>[2]. Kao, I., Tang, J., Ortiz, G.C., Zhu, M., Yuan, S., Rao, R., Li, J., Edgar, J.H., Yan, J., Mandrus, D.G. and Watanabe, K., 2024. Unconventional Unidirectional Magnetoresistance in vdW Heterostructures. arXiv preprint arXiv:2405.10889.<br>
