Unconventional magneto-transport properties of Cr<sub>3</sub>Te<sub>4</sub> and their gate modulation
ORAL
Abstract
Layered transition-metal dichalcogenides (TMDCs) have attracted a lot of attention due to their unique 2D properties that could emerge by reducing the layer number down to the monolayer limit. Among different TMDCs, Cr1+xTe2 is of great importance as one of room-temperature vdW ferromagnets. Moreover, recent studies have unveiled the intriguing magneto-transport properties of this material system potentially associated with a semimetallic band as verified by the angle-resolved photoemission spectroscopy measurements [1].
Recently, we have succeeded in fabricating high-quality Cr3Te4 epitaxial thin films by molecular-beam epitaxy [2], and revealed the impacts of vacuum annealing [2] and Li intercalation [3] on their magnetic properties. In this study, we conducted the Li intercalation to the annealed Cr3Te4 epitaxial thin films, which are known to possess unique magnetic properties that are different from the as-grown films [2]. We will in particular focus on the gating effects on the magneto-transport properties, which turned out to be unusual that have not been observed in the previous gating experiments on a simple ferromagnet.
[1] Y. Fujisawa, et al., Adv. Mater. 35, 2207121 (2023).
[2] Y. Wang, et al., Nano Lett. 22, 9964-9971 (2022).
[3] H. Matsuoka, et al., Sci. Adv. 10, eadk1415 (2024).
Recently, we have succeeded in fabricating high-quality Cr3Te4 epitaxial thin films by molecular-beam epitaxy [2], and revealed the impacts of vacuum annealing [2] and Li intercalation [3] on their magnetic properties. In this study, we conducted the Li intercalation to the annealed Cr3Te4 epitaxial thin films, which are known to possess unique magnetic properties that are different from the as-grown films [2]. We will in particular focus on the gating effects on the magneto-transport properties, which turned out to be unusual that have not been observed in the previous gating experiments on a simple ferromagnet.
[1] Y. Fujisawa, et al., Adv. Mater. 35, 2207121 (2023).
[2] Y. Wang, et al., Nano Lett. 22, 9964-9971 (2022).
[3] H. Matsuoka, et al., Sci. Adv. 10, eadk1415 (2024).
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Presenters
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Kanta Endo
Tokyo university
Authors
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Kanta Endo
Tokyo university
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Hideki Matsuoka
RIKEN
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Yoshihiro Iwasa
RIKEN
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Masaki Nakano
Shibaura Institute of Technology