First Principles Investigation of Plasmon Excitation and Decay at Metal-Semiconductor Interface
ORAL
Abstract
We employ real-time time-dependent density functional theory (RT-TDDFT) to study the process of plasmon-induced charge transfer from a plasmonic metal nanoparticle to semiconductor surface at the interface. Using the recently-developed approach of propagating maximally-localized Wannier functions in RT-TDDFT, we describe out-of-equilibrium dynamics of the plasmon decay in the nano-particle and the resulting charge transfer at the interface. In this work we focus specifically on the plasmonic Ag20nanocluster adsorbed on a hydrogenated silicon surface. We will discuss how the decay of plasmon excitation results in the energy transfer to the semiconductor.
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Publication: Hot carrier transfer from plasmon decay in Ag20at H-Si(111) surface: Real-time TDDFT simulation in Wannier gauge
Presenters
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John Lucas Bost
University of North Carolina at Chapel Hill
Authors
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John Lucas Bost
University of North Carolina at Chapel Hill
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Yosuke Kanai
University of North Carolina at Chapel Hill
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Christopher C Shepard
University of North Carolina at Chapel H