Effect of disorder on the magnetotransport of charge density wave kagome metal ScV₆Sn₆

Materials containing kagome lattices have garnered significant attention due to their potential to display both non-trivial electronic topology and correlated electronic states. ScV₆Sn₆ hosts a kagome lattice composed of only V ions and undergoes a charge density wave (CDW) transition at ~90K. Intriguigly, it was reported that a potential anomalous Hall effect (AHE) develops below T_CDW in this material, similar to the scenario observed in the AV₃Sb₅ (A = K, Rb, Cs) family. We present magnetotransport data on single crystals of ScV₆Sn₆ in which the residual resistivity ratio (RRR) reaches up to 50, more than five times higher than in previous literature. The highest RRR samples have significantly higher mobilities than the low RRR samples, allowing for more straightforward analysis of the Hall effect. We show that the Hall effect in ScV₆Sn₆ can be well described by a multi-band model without the inclusion of an AHE. The magnetotransport data also allows for further investiation of the fermiology of ScV₆Sn₆ than has previously been reported. These results highlight the importance of optimizing the growth of quantum materials to study their fundamental properties.