Tunable square lattice Hubbard model in twisted bilayer C<sub>568</sub>
ORAL
Abstract
We propose twisted homobilayer C568 as a candidate for realizing tunable single-band square lattice Hubbard model even without displacement field. C568 is a recently predicted 2D carbon allotrope which has square lattice periodicities and features the rotoinversion symmetry S4 instead of C4z. The monolayer hosts a valence top at the M-point, the square Brillouin zone corner, which is the focus of our study
We derive a continuum model where necessary parameters are calibrated with the ab-initio results, and then construct a single-band extended Hubbard model for the top moiré valence band. Inspections on the derived Hubbard model reveal that (i) the twist angle enables wide-ranging tuning of the ratio between the nearest and the next nearest neighbor hoppings in the Hubbard model, and (ii) a finite displacement field induces anisotropy in the nearest neighborhoppings. These results highlight the potential of C568 as a versatile material for studying artificial stackings and can potentially lead to high-temperature superconductivity which resembles curate physics.
We derive a continuum model where necessary parameters are calibrated with the ab-initio results, and then construct a single-band extended Hubbard model for the top moiré valence band. Inspections on the derived Hubbard model reveal that (i) the twist angle enables wide-ranging tuning of the ratio between the nearest and the next nearest neighbor hoppings in the Hubbard model, and (ii) a finite displacement field induces anisotropy in the nearest neighborhoppings. These results highlight the potential of C568 as a versatile material for studying artificial stackings and can potentially lead to high-temperature superconductivity which resembles curate physics.
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Presenters
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Toshikaze Kariyado
National Institute for Materials Science
Authors
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Toshikaze Kariyado
National Institute for Materials Science
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Zhu-Xi Luo
Harvard University, Georgia Institute of Technology
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Ashvin Vishwanath
Harvard University