De-embedding interconnects from mmWave flip-chip integrated photodiodes

6G technologies are pushing electronics and materials testing into mmWave (30 GHz - 300 GHz) and low THz regime, however, conventional up-conversion methods are band limited and noisy. We have previously presented a method for signal generation that relies on flip-chip integration of photodiodes onto lithographically patterned, electrooptic waveguides for low-noise, high power signal generation in the hundreds of GHz. While this method proved to be more broadband than traditional vector network analyzer extender heads, the on-wafer reference plane poses challenges such as de-embedding the bonding interconnect from the photodiode performance. This work focuses on characterizing, diagnosing, and correcting for the effects of those interconnects.