Principle of Minimum Entropy Production Rate in ECM Memristors

Electrochemical metallization (ECM) memristors are promising candidates for neuromorphic computing hardware. The set, reset, and variable resistance features of these devices originates in the formation and breakup of metal filaments in a solid state electrolyte. Current research on these devices focuses on the resulting current-voltage characteristics of the device rather than the mechanics driving the morphology of the formed filaments. Here we propose that the minimization of the entropy production rate in the system is the driving mechanism to determine the filament morphology. This principle is examined through kinetic Monte Carlo simulation of ECM memristors. The resulting entropy production rate curves are presented, and limits to the near-equilibrium linear approximation are examined.