Optimization of Single-Photon Emitters in Hexagonal Boron Nitride

Single photons emitters (SPEs) are critical to numerous quantum technologies. In recent years, hexagonal Boron Nitride (hBN) emerged as a promising host material for single-photon emitters. Particularly remarkable amongst hBN quantum emitters are "blue emitters", which can be deterministically generated via electron irradiation, yield partially indistinguishable photons with narrow linewidths, and have high emission consistency between emitters. However, there are significant barriers to the scalable production of integrated photonic devices utilizing hBN SPEs. Spectral diffusion, or emission variation over time, degrades the ability of single photons to interfere as quantum objects and is therefore a serious obstacle to the realization of an ideal quantum emitter. In this poster, we report progress in a study of the PL spectrum, stability, and purity of emitters in hBN. We also present plans and progress towards mitigation of emitter spectral diffusion and improving inter-emitter consistency. We aim to introduce strain tuning to demonstrate a feedback tuning system for SPE emission stabilization in real time. Additionally, we discuss the use of doped hBN devices for electrical tuning and seek to demonstrate an expanded tunable emission range and emitter linewidth improvement. Finally, we summarize the current best-case parameters for SPEs in hBN, single-photon requirements for quantum technologies, and challenges to the realization of an ideal single-photon source in a 2D material.