Conduction mechanism in Solution Processed Silicon-Graphene oxide stacked MOS Device

Graphene Oxide (GO) is a promising material for next-generation electronic devices. GO's exceptional electrical, mechanical, and thermal properties, along with its ability to form stable, low-leakage films at low processing temperatures, make it a strong candidate for enhancing device performance and scalability. This study explores the interface characteristics of solution processed GO in metal-oxide-semiconductor (MOS) structures using Termann method, revealing low interface trap densities (Dit) of 5.8×10¹¹ cm-2 eV-1 at 500 kHz, comparable to high-quality SiO2 dielectrics. We have also compared the trap state densities of GO MOS devices characterized by low speed and High speed CV measurement systems.we have observed that the conduction in the GO MOS device is controlled by Poole- Frenkel conduction mechanism at lower voltage.