Fabrication of ultra-clean gate-tunable rhombohedral multilayer graphene devices for STM study (Part 1)

Rhombohedral multilayer graphene exhibits exotic correlated electronic states and topological phases, such as the integer and fractional Chern insulating states. While prior studies have used transport methods to probe these properties, direct STM studies remain limited, particularly for higher-layer structures. Here, we present the fabrication of gate-tunable rhombohedral multilayer graphene devices. Our poster details the device fabrication process of using a novel PVC dry transfer technique to prevent the rhombohedral domain from relaxing while ensuring a clean surface for STM studies.