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Ultrawide Bandgap Semiconductors I

FOCUS · MAR-Q39 · ID: 3110939

Presentations

  • Heterostructural rocksalt-wurtzite TaC/AlGaN interfaces from first principles

    ORAL

    –

    Publication: Sharad Mahatara and Stephan Lany, "Heterostructural interface engineering for ultrawide gap nitrides from first principles: TaC/AlN and TaC/GaN rocksalt-wurtzite interfaces", Phys. Rev. Appl. (accepted, 2024)

    Presenters

    • Stephan Lany

      National Renewable Energy Laboratory (NREL)

    Authors

    • Stephan Lany

      National Renewable Energy Laboratory (NREL)

    • Sharad Mahatara

      National Renewable Energy Laboratory

    View abstract →

  • Band Alignments at Polar Nitride Heterojunctions

    ORAL

    –

    Presenters

    • Akash Ram

      University of California Santa Barbara

    Authors

    • Akash Ram

      University of California Santa Barbara

    • Chris G Van de Walle

      University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

    • Su-Hyun Yoo

      Korea Research Institute of Chemical Technology

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  • Jun Suda

    ORAL · Invited

    –

    Presenters

    • Jun Suda

      Nagoya University

    Authors

    • Jun Suda

      Nagoya University

    View abstract →

  • Experimental Analysis of Possible Origin of p-type Conductivity in Ultrawide Bandgap LiGa<sub>5</sub>O<sub>8 </sub>Thin Films

    ORAL

    –

    Publication: Experimental Analysis of the Possible Origin for p-type Conductivity of Mist-CVD Grown LiGa5O8 (planned)

    Presenters

    • Kaitian Zhang

      the Ohio State University

    Authors

    • Kaitian Zhang

      the Ohio State University

    • Vijay Gopal Thirupakuzi Vangipuram

      Ohio State University, the Ohio State University

    • Hongping Zhao

      The Ohio State University

    View abstract →

  • MOCVD growth and properties of ultrawide bandgap MgSiN<sub>2</sub>

    ORAL

    –

    Presenters

    • Vijay Gopal Thirupakuzi Vangipuram

      Ohio State University, the Ohio State University

    Authors

    • Vijay Gopal Thirupakuzi Vangipuram

      Ohio State University, the Ohio State University

    • Chenxi Hu

      Case Western Reserve University

    • Chris Chae

      Ohio State University, The Ohio State University

    • Abdul Mukit Majumder

      Ohio State University

    • Kaitian Zhang

      the Ohio State University

    • Jinwoo Hwang

      Ohio State University

    • Kathleen Kash

      Case Western Reserve University

    • Hongping Zhao

      The Ohio State University

    View abstract →

  • More than your average semiconductor: Exciton-Franz-Keldysh effect and the anisotropic Beer-Lambert law in β-Ga₂O₃

    ORAL

    –

    Publication: [1] Md. M. R. Adnan, D. Verma, Z. Xia, N. K. Kalarickal, S. Rajan, and R. C. Myers, "Spectral Measurement of the Breakdown Limit of β-Ga₂O₃ and Tunnel Ionization of Self-Trapped Excitons and Holes," Phys. Rev. Applied, vol. 16, no. 3, p. 034011, Sep. 2021, doi: 10.1103/physrevapplied.16.034011.<br>[2] D. Verma, M. M. R. Adnan, S. Dhara, C. Sturm, S. Rajan, and R. C. Myers, "Anisotropic excitonic photocurrent in β-Ga₂O₃," Phys. Rev. Mater., vol. 7, no. 6, p. L061601, Jun. 2023, doi: 10.1103/PhysRevMaterials.7.L061601.<br>[3] M. M. R. Adnan, M. Schubert, and R. C. Myers, "Origin of the anisotropic Beer–Lambert law from dichroism and birefringence in β-Ga2O3," Applied Physics Letters, vol. 125, no. 8, p. 081103, Aug. 2024, doi: 10.1063/5.0226902.<br>[4] Md. M. R. Adnan, D. Verma, C. Sturm, M. Schubert, and R. C. Myers, "Anisotropic Beer-Lambert law in β - Ga 2 O 3 : Polarization-dependent absorption and photoresponsivity spectra," Phys. Rev. Applied, vol. 21, no. 5, p. 054059, May 2024, doi: 10.1103/PhysRevApplied.21.054059.

    Presenters

    • Roberto C Myers

      Ohio State University

    Authors

    • Roberto C Myers

      Ohio State University

    View abstract →